Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Solitron Devices Inc. |
| package instruction | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Configuration | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.035 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-MSFM-P3 |
| Number of components | 3 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 450 W |
| Maximum pulsed drain current (IDM) | 360 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 220 ns |
| Maximum opening time (tons) | 210 ns |
| SDF75NA20GBNZD1N | SDF75NA20GBNED1N | SDF75NA20GBNWSN | SDF75NA20GBNESN | SDF75NA20GBNEU1N | SDF75NA20GBNWD1N | SDF75NA20GBNWU1N | SDF75NA20GBNZSN | SDF75NA20GBNZU1N | |
|---|---|---|---|---|---|---|---|---|---|
| Description | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| Is it lead-free? | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Maker | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. | Solitron Devices Inc. |
| package instruction | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 | FLANGE MOUNT, R-MSFM-P3 |
| Reach Compliance Code | unknow | unknown | unknown | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Configuration | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR | PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR |
| Minimum drain-source breakdown voltage | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V | 200 V |
| Maximum drain current (ID) | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A | 75 A |
| Maximum drain-source on-resistance | 0.035 Ω | 0.035 Ω | 0.035 Ω | 0.035 Ω | 0.035 Ω | 0.035 Ω | 0.035 Ω | 0.035 Ω | 0.035 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 | R-MSFM-P3 |
| Number of components | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 450 W | 450 W | 450 W | 450 W | 450 W | 450 W | 450 W | 450 W | 450 W |
| Maximum pulsed drain current (IDM) | 360 A | 360 A | 360 A | 360 A | 360 A | 360 A | 360 A | 360 A | 360 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG | PIN/PEG |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns |
| Maximum opening time (tons) | 210 ns | 210 ns | 210 ns | 210 ns | 210 ns | 210 ns | 210 ns | 210 ns | 210 ns |