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SDF75NA20GBNZD1N

Description
Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size151KB,1 Pages
ManufacturerSolitron Devices Inc.
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SDF75NA20GBNZD1N Overview

Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

SDF75NA20GBNZD1N Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSolitron Devices Inc.
package instructionFLANGE MOUNT, R-MSFM-P3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationPARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.035 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-P3
Number of components3
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment450 W
Maximum pulsed drain current (IDM)360 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Maximum off time (toff)220 ns
Maximum opening time (tons)210 ns

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Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Maker Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc. Solitron Devices Inc.
package instruction FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code unknow unknown unknown unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Configuration PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR
Minimum drain-source breakdown voltage 200 V 200 V 200 V 200 V 200 V 200 V 200 V 200 V 200 V
Maximum drain current (ID) 75 A 75 A 75 A 75 A 75 A 75 A 75 A 75 A 75 A
Maximum drain-source on-resistance 0.035 Ω 0.035 Ω 0.035 Ω 0.035 Ω 0.035 Ω 0.035 Ω 0.035 Ω 0.035 Ω 0.035 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3 R-MSFM-P3
Number of components 3 3 3 3 3 3 3 3 3
Number of terminals 3 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL METAL
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 450 W 450 W 450 W 450 W 450 W 450 W 450 W 450 W 450 W
Maximum pulsed drain current (IDM) 360 A 360 A 360 A 360 A 360 A 360 A 360 A 360 A 360 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 220 ns 220 ns 220 ns 220 ns 220 ns 220 ns 220 ns 220 ns 220 ns
Maximum opening time (tons) 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns 210 ns
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