SDF75NA20GBNZU1N datasheet, PDF

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SDF75NA20GBNZU1N: DescriptionPower Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size151KB，1 Pages; ManufacturerSolitron Devices Inc.

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SDF75NA20GBNZU1N Overview

Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

SDF75NA20GBNZU1N Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Solitron Devices Inc.
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MSFM-P3
Number of components	3
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	450 W
Maximum pulsed drain current (IDM)	360 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	220 ns
Maximum opening time (tons)	210 ns

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Description	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, 75A I(D), 200V, 0.035ohm, 3-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.	Solitron Devices Inc.
package instruction	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknow	unknown	unknown	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Configuration	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR	PARALLEL, 3 ELEMENTS WITH BUILT-IN RESISTOR
Minimum drain-source breakdown voltage	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V	200 V
Maximum drain current (ID)	75 A	75 A	75 A	75 A	75 A	75 A	75 A	75 A	75 A
Maximum drain-source on-resistance	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω	0.035 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3	R-MSFM-P3
Number of components	3	3	3	3	3	3	3	3	3
Number of terminals	3	3	3	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	450 W	450 W	450 W	450 W	450 W	450 W	450 W	450 W	450 W
Maximum pulsed drain current (IDM)	360 A	360 A	360 A	360 A	360 A	360 A	360 A	360 A	360 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	220 ns	220 ns	220 ns	220 ns	220 ns	220 ns	220 ns	220 ns	220 ns
Maximum opening time (tons)	210 ns	210 ns	210 ns	210 ns	210 ns	210 ns	210 ns	210 ns	210 ns

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