SGA5589Z datasheet, PDF - EEWORLD Datasheet

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SGA5589ZDC

to 4000MHz,

Cascadable

SiGe HBT

MMIC Ampli-

fier

SGA5589Z

DC to 4000MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

Package: SOT-89

Product Description

The SGA5589Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

ton configuration featuring one-micron emitters provides high F

T

and

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

Optimum Technology

Matching® Applied

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

LDMOS

0

1

2

3

4

Frequency (GHz)

5

6

-40

24

32

Features



High Gain: 20.8dB at

1950MHz

Cascadable 50

Operates from Single Supply

Low Thermal Resistance

Package

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Applications

Gain & Return Loss vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA (Typ.)

0



GAIN

Return Loss (dB)

-10

Gain (dB)



ORL

IRL

-20



16

8

-30

Parameter

Small Signal Gain

Min.

21.5

Specification

Typ.

24.0

20.8

18.9

18.2

16.2

32.9

29.2

4000

Max.

26.5

Unit

dB

dBm

MHz

850MHz

1950MHz

2400MHz

850MHz

1950MHz

850MHz

1950MHz

>10dB

Condition

Output Power at 1dB Compression

Output Third Intercept Point

Bandwidth Determined by Return

Loss

Input Return Loss

13.7

dB

1950MHz

Output Return Loss

25.2

dB

1950MHz

Noise Figure

3.4

dB

1950MHz

Device Operating Voltage

3.5

3.9

4.3

V

Device Operating Current

54

60

66

mA

Thermal Resistance

97

°C/W

(Junction - Lead)

Test Conditions: V

S

=8V, I

D

=60mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=68, T

L

=25°C, Z

S

=Z

L

=50

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

1 of 6

SGA5589Z

Absolute Maximum Ratings

Parameter

Max Device Current (I

D

)

Max Device Voltage (V

D

)

Max RF Input Power

Max Junction Temp (T

J

)

Operating Temp Range (T

L

)

Max Storage Temp

Rating

120

6

+16

+150

-40 to +85

+150

Unit

mA

V

dBm

°C

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

Moisture Sensitivity Level

MSL 2

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

I

D

V

D

<(T

J

-T

L

)/R

TH

, j-l

Typical Performance at Key Operating Frequencies

Parameter

Unit

100

MHz

500

MHz

850

MHz

1950

MHz

2400

MHz

18.9

27.7

15.1

12.8

12.2

23.9

3.6

3500

MHz

16

Small Signal Gain

dB

25

24.7

23.8

20.3

Output Third Order Intercept Point

dBm

31.6

32.9

29.2

Output Power at 1dB Compression

dBm

17.9

18.2

16.2

Input Return Loss

dB

18.9

17.5

15.7

13.7

Output Return Loss

dB

17.2

16.7

15.7

13

Reverse Isolation

dB

27.1

25.2

Noise Figure

dB

2.8

3.0

3.4

Test Conditions: V

S

=8V, I

D

=60mA Typ., OIP

3

Tone Spacing=1MHz, P

OUT

per tone=0dBm, R

BIAS

=68, T

L

=25°C, Z

S

=Z

L

=50

11.3

10.3

21

OIP

3

vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA

40

20

18

P

1dB

(dBm)

16

14

12

P

1dB

vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA

35

OIP

3

(dBm)

30

25

T

L

=+25ºC

20

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

T

L

=+25ºC

10

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

Noise Figure vs. Frequency

V

D

=3.9V, I

D

= 60 mA

5

Noise Figure (dB)

4

3

2

1

T

L

=+25ºC

0

0.5

1

1.5

2

Frequency (GHz)

2.5

3

2 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111014

SGA5589Z

|

S

21

|

vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA (Typ.)

32

0

S

11

vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA (Typ.)

24

S

21

(dB)

S

11

(dB)

+25°C

-40°C

+85°C

-10

16

-20

8

-30

T

L

0

1

2

3

4

Frequency (GHz)

5

T

L

-40

+25°C

-40°C

+85°C

6

0

1

2

3

4

Frequency (GHz)

5

6

S

12

vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA (Typ.)

-10

0

S

22

vs. Frequency

V

D

= 3.9 V, I

D

= 60 mA (Typ.)

-15

S

12

(dB)

S

21

(dB)

+25°C

-40°C

+85°C

-10

-20

-25

-30

T

L

-30

0

1

2

3

4

Frequency (GHz)

5

T

L

-40

6

0

1

2

3

4

Frequency (GHz)

5

+25°C

-40°C

+85°C

6

DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

3 of 6

SGA5589Z

1

2, 4

3

Function

RF IN

GND

RF OUT/BIAS

Description

RF input pin. This pin requires the use of an external DC-blocking capacitor chosen for the frequency of operation.

Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-

ble.

RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-

ation.

Application Schematic

Frequency (Mhz)

V

S

R

BIAS

1 uF

1000

pF

Reference

Designator

500

850

1950

2400

3500

C

B

220 pF

100 pF

68 nH

100 pF

68 pF

33 nH

68 pF

22 pF

22 nH

56 pF

22 pF

18 nH

39 pF

15 pF

15 nH

C

D

L

C

D

L

C

RF in

C

B

1

SGA5589Z

3

2

C

B

4

Recommended Bias Resistor Values for I

D

=60mA

R

BIAS

=( V

S

-V

D

) / I

D

RF out

Supply Voltage(V

S

)

R

BIAS

6V

36

8V

68

10 V

100

12 V

130

Note: R

BIAS

provides DC bias stability over temperature.

Evaluation Board Layout

Mounting Instructions:

1. Solder the copper pad on the backside of the device package to the ground plane.

2. Use a large ground pad area with many plated through-holes as shown.

3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1

ounce copper on both sides.

4 of 6

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

DS111014

SGA5589Z

Suggested Pad Layout

Preliminary

Package Drawing

Dimensions in inches (millimeters)

Refer to drawing posted at www.rfmd.com for tolerances.

DS111014

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

5 of 6

Parameter Name	Attribute value
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum input power	16 dBm
Maximum operating frequency	4000 MHz
Minimum operating frequency	0.0 MHz
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
structure	COMPONENT
terminal coating	NOT SPECIFIED
Impedance characteristics	50 ohm
Microwave RF Type	WIDE BAND LOW POWER

	SGA5589Z	SGA5589ZSQ	SGA5589ZPCK1	SGA5589ZSR
Description	0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER	0 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Maximum operating temperature	85 Cel	85 Cel	85 Cel	85 Cel
Minimum operating temperature	-40 Cel	-40 Cel	-40 Cel	-40 Cel
Maximum input power	16 dBm	16 dBm	16 dBm	16 dBm
Maximum operating frequency	4000 MHz	4000 MHz	4000 MHz	4000 MHz
Minimum operating frequency	0.0 MHz	0.0 MHz	0.0 MHz	0.0 MHz
Processing package description	HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN	HALOGEN FREE AND ROHS COMPLIANT, SOT-89, 3 PIN
Lead-free	Yes	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE	ACTIVE
structure	COMPONENT	COMPONENT	COMPONENT	COMPONENT
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Impedance characteristics	50 ohm	50 ohm	50 ohm	50 ohm
Microwave RF Type	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER	WIDE BAND LOW POWER

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