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SMLJ17C

Description
Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Bidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size232KB,2 Pages
ManufacturerInternational Semiconductor Inc
Download Datasheet Parametric View All

SMLJ17C Overview

Trans Voltage Suppressor Diode, 3000W, 17V V(RWM), Bidirectional, 1 Element, Silicon

SMLJ17C Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionR-PDSO-C2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Maximum breakdown voltage23.1 V
Minimum breakdown voltage18.9 V
Breakdown voltage nominal value21 V
Maximum clamping voltage30.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityBIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage17 V
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
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