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SMLJ6.0A

Description
Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size126KB,1 Pages
ManufacturerInternational Semiconductor Inc
Download Datasheet Parametric View All

SMLJ6.0A Overview

Trans Voltage Suppressor Diode, 3000W, 6V V(RWM), Unidirectional, 1 Element, Silicon

SMLJ6.0A Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionR-PDSO-C2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Maximum breakdown voltage7.37 V
Minimum breakdown voltage6.67 V
Breakdown voltage nominal value7.02 V
Maximum clamping voltage10.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage6 V
Maximum reverse current1000 µA
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
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