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BAR81

Description
30 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size48KB,3 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BAR81 Overview

30 V, SILICON, PIN DIODE

BAR81 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionR-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSWITCHING
Minimum breakdown voltage30 V
Shell connectionCATHODE
ConfigurationSINGLE
Maximum diode capacitance0.6 pF
Diode component materialsSILICON
Maximum diode forward resistance0.56 Ω
Diode resistance test current10 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
JESD-30 codeR-PDSO-G4
Minority carrier nominal lifetime0.08 µs
Number of components1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Reverse test voltage20 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
BAR 81
Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
Type
BAR 81
Marking Ordering Code
BBs
Q62702-
Q62702-A1145
Pin Configuration
1=C
2=A
3=C
4=A
Package
MW-4
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
Values
30
100
- 55 ... + 125
- 55 ... + 150
Unit
V
mA
°C
V
R
I
F
T
op
T
stg
Semiconductor Group
1
Feb-26-1996

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