DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS29; BAS31; BAS35
General purpose controlled
avalanche (double) diodes
Product specification
Supersedes data of 1996 Sep 10
1999 May 21
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage:
max. 90 V
•
Repetitive peak reverse voltage:
max. 110 V
•
Repetitive peak forward current:
max. 600 mA
•
Repetitive peak reverse current:
max. 600 mA.
APPLICATIONS
•
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
3
handbook, halfpage
2
BAS29; BAS31; BAS35
PINNING
DESCRIPTION
PIN
BAS29
1
2
3
anode
not connected
cathode
anode
cathode
common connection
BAS31
BAS35
cathode (k1)
cathode (k2)
common anode
1
2
3
1
General purpose switching diodes
fabricated in planar technology, and
encapsulated in small rectangular
plastic SMD SOT23 packages.
The BAS29 consists of a single diode.
The BAS31 has two diodes in series.
The BAS35 has two diodes with a
common anode.
MARKING
TYPE NUMBER
BAS29
BAS31
BAS35
MARKING
CODE
L20
L21
L22
a. Simplified outline.
c. BAS31 diode.
2
n.c.
3
b. BAS29 diode.
1
2
3
d. BAS35 diode.
1
MAM233
Fig.1 Simplified outline (SOT23) and symbols.
1999 May 21
2
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
−
−
MAX.
UNIT
110
90
250
150
600
V
V
mA
mA
mA
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
−
−
−
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t=1s
−
−
−
−
−
−
−65
−
10
4
0.75
250
600
5
+150
150
A
A
A
mW
mA
mJ
°C
°C
P
tot
I
RRM
E
RRM
T
stg
T
j
Note
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
t
p
≥
50
µs;
f
≤
20 Hz; T
j
= 25
°C
1. Device mounted on an FR4 printed-circuit board.
1999 May 21
3
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 400 mA
I
R
reverse current
see Fig.5
V
R
= 90 V
V
R
= 90 V; T
j
= 150
°C
V
(BR)R
C
d
t
rr
reverse avalanche breakdown
voltage
diode capacitance
reverse recovery time
I
R
= 1 mA
f = 1 MHz; V
R
= 0; see Fig.6
PARAMETER
CONDITIONS
BAS29; BAS31; BAS35
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
120
−
−
750
840
900
1
1.25
100
100
170
35
50
mV
mV
mV
V
V
nA
µA
V
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA; see Fig.7
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
1999 May 21
4
Philips Semiconductors
Product specification
General purpose controlled avalanche
(double) diodes
GRAPHICAL DATA
BAS29; BAS31; BAS35
handbook, halfpage
300
MBG440
handbook, halfpage
600
MBH280
IF
(mA)
200
(1)
IF
(mA)
400
(1)
(2)
(3)
100
(2)
200
0
0
100
Tamb (
o
C)
200
0
0
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBH327
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 21
5
京公网安备 11010802033920号
EEWORLD
