TC514101AP-60 datasheet, PDF - EEWORLD Datasheet

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TC514101AP-60: Description4,194,304 WORD x 1 BIT DYNAMIC RAM; Categorystorage storage; File Size728KB，23 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TC514101AP-60 Overview

4,194,304 WORD x 1 BIT DYNAMIC RAM

TC514101AP-60 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	DIP
package instruction	DIP,
Contacts	18
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	NIBBLE
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
length	22 mm
memory density	4194304 bi
Memory IC Type	NIBBLE MODE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	18
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	4.4 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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TC514101AP-60 Related Products

	TC514101AP-60	TC514101AZ-60	TC514101AP	TC514101ASJ-60	TC514101AJ-60
Description	4,194,304 WORD x 1 BIT DYNAMIC RAM	4,194,304 WORD x 1 BIT DYNAMIC RAM	4,194,304 WORD x 1 BIT DYNAMIC RAM	4,194,304 WORD x 1 BIT DYNAMIC RAM	4,194,304 WORD x 1 BIT DYNAMIC RAM
Is it lead-free?	Contains lead	Contains lead	-	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	-	incompatible	incompatible
Maker	Toshiba Semiconductor	Toshiba Semiconductor	-	Toshiba Semiconductor	-
Parts packaging code	DIP	ZIP	-	SOJ	SOJ
package instruction	DIP,	ZIP,	-	SOJ,	SOJ,
Contacts	18	20	-	20	20
Reach Compliance Code	unknow	unknow	-	unknow	unknow
ECCN code	EAR99	EAR99	-	EAR99	EAR99
access mode	NIBBLE	NIBBLE	-	NIBBLE	NIBBLE
Maximum access time	60 ns	60 ns	-	60 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	-	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code	R-PDIP-T18	R-PZIP-T20	-	R-PDSO-J20	R-PDSO-J20
JESD-609 code	e0	e0	-	e0	e0
length	22 mm	25.8 mm	-	17.15 mm	17.15 mm
memory density	4194304 bi	4194304 bi	-	4194304 bi	4194304 bi
Memory IC Type	NIBBLE MODE DRAM	NIBBLE MODE DRAM	-	NIBBLE MODE DRAM	NIBBLE MODE DRAM
memory width	1	1	-	1	1
Number of functions	1	1	-	1	1
Number of ports	1	1	-	1	1
Number of terminals	18	20	-	20	20
word count	4194304 words	4194304 words	-	4194304 words	4194304 words
character code	4000000	4000000	-	4000000	4000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	-	70 °C	70 °C
organize	4MX1	4MX1	-	4MX1	4MX1
Output characteristics	3-STATE	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	ZIP	-	SOJ	SOJ
Package shape	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	-	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	1024	1024	-	1024	1024
Maximum seat height	4.4 mm	10.16 mm	-	3.75 mm	3.75 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	-	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	-	5 V	5 V
surface mount	NO	NO	-	YES	YES
technology	CMOS	CMOS	-	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	-	J BEND	J BEND
Terminal pitch	2.54 mm	1.27 mm	-	1.27 mm	1.27 mm
Terminal location	DUAL	ZIG-ZAG	-	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	-	-	7.7 mm	8.89 mm

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