EEWORLDEEWORLDEEWORLD

Part Number

Search

K7P323674C-HC250

Description
Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
Categorystorage    storage   
File Size450KB,15 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K7P323674C-HC250 Overview

Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

K7P323674C-HC250 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time2 ns
Other featuresPIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density37748736 bit
Memory IC TypeLATE-WRITE SRAM
memory width36
Number of functions1
Number of terminals119
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply1.8,2.5 V
Certification statusNot Qualified
Maximum seat height2.21 mm
Maximum standby current0.07 A
Minimum standby current1.7 V
Maximum slew rate0.55 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width14 mm
K7P323674C
K7P321874C
1Mx36 & 2Mx18 SRAM
36Mb Late Write SRAM Specification
119BGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.2 February 2007

K7P323674C-HC250 Related Products

K7P323674C-HC250 K7P321874C-HC250 K7P323674C-GC250 K7P321874C-GC250 K7P321874C-HC300 K7P321874C-GC300 K7P323674C-GC300 K7P323674C-HC300
Description Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 Late-Write SRAM, 1MX36, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119 Late-Write SRAM, 2MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119 Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 Late-Write SRAM, 2MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119 Late-Write SRAM, 1MX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119 Late-Write SRAM, 1MX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
Is it Rohs certified? incompatible incompatible conform to conform to incompatible conform to conform to incompatible
Maker SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG SAMSUNG
Parts packaging code BGA BGA BGA BGA BGA BGA BGA BGA
package instruction BGA, BGA119,7X17,50 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, BGA-119 BGA, BGA119,7X17,50
Contacts 119 119 119 119 119 119 119 119
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 2 ns 2 ns 2 ns 2 ns 1.6 ns 1.6 ns 1.6 ns 1.6 ns
Other features PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY PIPELINED ARCHITECTURE, IT CAN ALSO OPERATE AT 2.5V SUPPLY PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK) 250 MHz 250 MHz 250 MHz 250 MHz 300 MHz 300 MHz 300 MHz 300 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119 R-PBGA-B119
JESD-609 code e0 e0 e1 e1 e0 e1 e1 e0
length 22 mm 22 mm 22 mm 22 mm 22 mm 22 mm 22 mm 22 mm
memory density 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit
Memory IC Type LATE-WRITE SRAM LATE-WRITE SRAM LATE-WRITE SRAM LATE-WRITE SRAM LATE-WRITE SRAM LATE-WRITE SRAM LATE-WRITE SRAM LATE-WRITE SRAM
memory width 36 18 36 18 18 18 36 36
Number of functions 1 1 1 1 1 1 1 1
Number of terminals 119 119 119 119 119 119 119 119
word count 1048576 words 2097152 words 1048576 words 2097152 words 2097152 words 2097152 words 1048576 words 1048576 words
character code 1000000 2000000 1000000 2000000 2000000 2000000 1000000 1000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 1MX36 2MX18 1MX36 2MX18 2MX18 2MX18 1MX36 1MX36
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code BGA BGA BGA BGA BGA BGA BGA BGA
Encapsulate equivalent code BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50 BGA119,7X17,50
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 225 225 260 260 225 260 260 225
power supply 1.8,2.5 V 1.8,2.5 V 1.8,2.5 V 1.8,2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 2.21 mm 2.21 mm 2.21 mm 2.21 mm 2.21 mm 2.21 mm 2.21 mm 2.21 mm
Maximum standby current 0.07 A 0.07 A 0.07 A 0.07 A 0.07 A 0.07 A 0.07 A 0.07 A
Minimum standby current 1.7 V 1.7 V 1.7 V 1.7 V 2.37 V 2.37 V 2.37 V 2.37 V
Maximum slew rate 0.55 mA 0.5 mA 0.55 mA 0.5 mA 0.57 mA 0.57 mA 0.62 mA 0.62 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V 1.9 V 2.63 V 2.63 V 2.63 V 2.63 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 2.37 V 2.37 V 2.37 V 2.37 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 2.5 V 2.5 V 2.5 V 2.5 V
surface mount YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal surface TIN LEAD TIN LEAD TIN SILVER COPPER TIN SILVER COPPER TIN LEAD TIN SILVER COPPER TIN SILVER COPPER TIN LEAD
Terminal form BALL BALL BALL BALL BALL BALL BALL BALL
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 30 30 40 40 30 40 40 30
width 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm
Base Number Matches - 1 1 1 1 1 - -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1447  209  180  1150  680  30  5  4  24  14 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号