DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAT18
Band-switching diode
Product specification
Supersedes data of April 1991
1996 Mar 13
Philips Semiconductors
Product specification
Band-switching diode
FEATURES
•
Continuous reverse voltage:
max. 35 V
•
Continuous forward current:
max. 100 mA
•
Low diode capacitance:
max. 1.0 pF
•
Low diode forward resistance:
max. 0.7
Ω.
APPLICATION
•
Band switching.
3
Marking code:
A2.
handbook, halfpage
2
BAT18
DESCRIPTION
Planar high performance
band-switching diode in a small
rectangular plastic SOT23 SMD
package.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
1
2
n.c.
3
MAM185
1
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
PARAMETER
MIN.
−
−
−55
−
MAX.
35
100
+125
125
V
mA
°C
°C
UNIT
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
see Fig.3
V
R
= 20V
V
R
= 20 V; T
j
= 60
°C
C
d
r
D
diode capacitance
diode forward resistance
f = 1 MHz; V
R
= 20 V; see Fig.4
I
F
= 5 mA; f = 200 MHz; see Fig.5
−
−
0.8
0.5
100
1
1.0
0.7
nA
µA
pF
Ω
CONDITIONS
I
F
= 100 mA; see Fig.2
TYP.
−
MAX.
1.2
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board.
1996 Mar 13
2
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
Philips Semiconductors
Product specification
Band-switching diode
GRAPHICAL DATA
MBG312
BAT18
handbook, halfpage
(1)
(2)
(3)
100
IF
(mA)
10
5
handbook, halfpage
IR
(nA)
10
4
MBG311
10
3
50
10
2
10
1
10
−1
0
50
100
Tj ( o C)
150
0
0
0.5
1
V F (V)
1.5
(1) T
j
= 60
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
V
R
= 20 V.
Solid line: maximum values.
Dotted line: typical values.
Fig.2
Forward current as a function of
forward voltage.
Fig.3
Reverse current as a function of
junction temperature.
handbook, halfpage
1.5
MBG313
handbook, halfpage
2
MBG314
Cd
(pF)
1
rD
(Ω)
1
0.5
0
−1
10
1
10
VR (V)
10
2
0
1
10
IF (mA)
10
2
f = 1 MHz; T
j
= 25
°C.
f = 200 MHz; T
j
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
Fig.5
Diode forward resistance as a function of
forward current; typical values.
1996 Mar 13
3
Philips Semiconductors
Product specification
Band-switching diode
PACKAGE OUTLINE
BAT18
book, full pagewidth
3.0
2.8
0.150
0.090
1.9
0.95
2
0.1
max
10 o
max
3
1.1
max
30 o
max
0.48
0.38
TOP VIEW
0.1 M A B
1
B
A
0.2 M A
0.55
0.45
10 o
max
1.4
1.2
2.5
max
MBC846
Dimensions in mm.
Fig.6 SOT23.
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
1996 Mar 13
4
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