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BAT54SLT1

Description
2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size61KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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BAT54SLT1 Overview

2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB

BAT54SLT1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instructionR-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAT54SLT1/D
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Extremely Fast Switching Speed
Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
BAT54SLT1
Motorola Preferred Device
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
3
1
2
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
MAXIMUM RATINGS
(TJ = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
VR
PF
225
1.8
IF
TJ
Tstg
200 Max
125 Max
– 55 to +150
mW
mW/°C
mA
°C
°C
Value
30
Unit
Volts
DEVICE MARKING
BAT54S = LD3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (IR = 10
µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
Preferred
devices are Motorola recommended choices for future use and best overall value.
Symbol
V(BR)R
CT
IR
VF
VF
VF
trr
VF
VF
IF
IFRM
IFSM
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
Thermal Clad is a registered trademark of the Bergquist Company.
REV 4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
5–1

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