STW10NC60 datasheet, PDF - EEWORLD Datasheet

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STW10NC60: DescriptionN-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET; CategoryDiscrete semiconductor The transistor; File Size225KB，9 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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STW10NC60 Overview

N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET

STW10NC60 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TO-247
package instruction	TO-247, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Avalanche Energy Efficiency Rating (Eas)	820 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (Abs) (ID)	10 A
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	160 W
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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STW10NC60

STH10NC60FI

N-CHANNEL 600V - 0.6Ω - 10A - TO-247/ISOWATT218

PowerMesh™II MOSFET

TYPE

STW10NC60

STH10NC60FI

DSS

600 V

DS(on)

< 0.75

Ω

< 0.75

Ω

10 A

10 A (*)

TYPICAL R

(on) = 0.6

Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-247

DESCRIPTION

The PowerMESH

™

II is the evolution of the first

generation of MESH OVERLAY

™.

The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVER

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(1)

TOT

dv/dt

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 kΩ)

Gate- source Voltage

Drain Current (continuous) at T

= 25°C

Drain Current (continuous) at T

= 100°C

Drain Current (pulsed)

Total Dissipation at T

= 25°C

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

6.3

160

1.28

Value

STW10NC60

600

±30

10 (*)

6.3 (*)

40 (*)

0.48

3.5

2500

– 55 to 150

(1)I

≤10A,

di/dt

≤100A/µs,

≤

(BR)DSS

, T

≤

JMAX

(*) Limited only by Maximum Temperature Allowed

Unit

W/°C

V/ns

°C

STH10NC60FI

(•)Pulse width limited by safe operating area

February 2002

1/9

STW10NC60 Related Products

	STW10NC60	STH10NC60	STH10NC60FI
Description	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET	N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET
Maker	STMicroelectronics	-	STMicroelectronics
Parts packaging code	TO-247	-	TO-218
package instruction	TO-247, 3 PIN	-	FLANGE MOUNT, R-PSFM-T3
Contacts	3	-	3
Reach Compliance Code	_compli	-	compli
Is Samacsys	N	-	N
Avalanche Energy Efficiency Rating (Eas)	820 mJ	-	820 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V	-	600 V
Maximum drain current (Abs) (ID)	10 A	-	10 A
Maximum drain current (ID)	10 A	-	10 A
Maximum drain-source on-resistance	0.75 Ω	-	0.75 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247	-	TO-218
JESD-30 code	R-PSFM-T3	-	R-PSFM-T3
Number of components	1	-	1
Number of terminals	3	-	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	-	N-CHANNEL
Maximum power dissipation(Abs)	160 W	-	60 W
Maximum pulsed drain current (IDM)	40 A	-	40 A
Certification status	Not Qualified	-	Not Qualified
surface mount	NO	-	NO
Terminal form	THROUGH-HOLE	-	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE
transistor applications	SWITCHING	-	SWITCHING
Transistor component materials	SILICON	-	SILICON
Base Number Matches	1	-	1

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