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FES2J

Description
2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerETC1
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FES2J Overview

2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA

FES2A ........ FES2J
2 Amp. Surface Mounted Glass Passivated Ultrafast Recovery Rectifier
Dimensions in mm.
5.1
± 0.3
CASE:
SMB/DO-214AA
Voltage
50 to 600 V
Current
2.0 A
®
1.25
± 0.25
1.25
± 0.25
Week code
Glass passivated junction
High current capability
The plastic material carries U/L 94 V-0
Low profile package
Easy pick and place
High temperature soldering 260 ºC 10 sec
2.0
Year code
Type No. Closs
4.2
Standard soldering pad
MECHANICAL DATA
Terminals: Solder plated, solderable per IEC 68-2-20.
Standard Packaging: 8 mm. tape (EIA-RS-481).
Weight: 0.093 g.
Maximum Ratings and Electrical Characteristics at 25 ºC
FES2A
FES2B
V2
FES2D
V3
FES2F
V4
FES2G
V5
FES2J
V6
Marking Code
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
rr
C
j
R
th (j-l)
R
th (j-a)
T
j -
T
stg
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Forward current at T
L
= 110 ºC
V1
50
35
50
100
70
100
200
140
300
210
400
280
400
600
420
600
200
300
2.0 A
50 A
8.3 ms. peak forward surge current
(Jedec Method)
Maximum Instantaneous Forward
Voltage at 2.0A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 ºC
Ta = 100 ºC
0.95 V
10 µA
350 µA
50 ns
35 pF
20 ºC/W
60 ºC/W
-55 to + 150 ºC
1.25 V
Maximum Reverse Recovery Time (0.5/1/0.25A)
Typical Junction Capacitance (1MHz; -4V)
Typical Thermal Resistance
(5x5 mm
2
x 130 µ Copper Area)
Operating Junction and Storage
Temperature Range
Jun - 03

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FES2J FES2A FES2B FES2D FES2F FES2G
Description 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA
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