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30KPA58CA

Description
Trans Voltage Suppressor Diode,
CategoryDiscrete semiconductor    diode   
File Size658KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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30KPA58CA Overview

Trans Voltage Suppressor Diode,

30KPA58CA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompli
Other featuresEXCELLENT CLAMPING CAPABILITY
Minimum breakdown voltage64.8 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation8 W
Maximum repetitive peak reverse voltage58 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
30KPA SERIES
Technical Data
Data Sheet N0126, Rev. E
30KPA SERIES GLASS PASSIVATED
TRANSIENT VOLTAGE SUPPRESSOR
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
Glass Passivated Junction
30000W Peak Pulse Power Capability on 10/1000 μs
waveform
Voltage-28.0 to 400 Volts
Excellent Clamping Capability
Repetition rate (duty cycle): 0.05%
Low incremental surge resistance
Fast Response Time: typically less than 1.0 ps from
volts to BV
High temperature soldering guaranteed: 265℃/10
seconds/.375”, (9.5mm) lead length, 5lbs., (2.3kg) tension
This is a Pb − Free Device
All SMC Parts are Traceable to the Wafer Lot
Additional testing can be offered upon request
P-600
Mechanical Data
Case: Molded Plastic over glass passivated junction
Terminals: Plated Axial leads , Solderable per
MIL-STD 750, Method 2026
Polarity: Color Band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight:2.1 grams(approx.)
Circuit Diagram
Maximum Ratings and Thermal Characteristics
@T
A
=25°C unless otherwise specified
Parameter
Peak Pulse Power Dissipation on 10x1000μs
Waveform(Note 1)
Peak Pulse Current on 10x1000μs
Waveform(Note 1)
Steady State Power Dissipation at T
L
=75°C Lead
Lengths .375”, (9.5mm)(Note 2)
Peak Forward Surge Current, 8.3ms Sine-Wave
Superimposed on Rated Load, (JEDEC
Method)(Note 3)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient
Operating Junction and Storage
Temperature Range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
R
θJL
R
θJA
T
J
,T
STG
Value
30000
See Table 1
8.0
400.0
8.0
40
-55 to 175
Unit
W
A
W
A
°C/W
°C/W
°C
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above TA = 25°C per Fig. 2.
2. Mounted on copper pad area of 0.8”
×
0.8” (20
×
20mm)
3. 8.3ms single half sine wave, or equivalent square, duty cycle=4 pulses per minute maximum.
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com
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