DATA SHEET
SEMICONDUCTOR
GBJ8005 THRU GBJ810
8.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass
Passivated Die Construction
•High
Case Dielectric Strength of 1500VRMS
•Low
Reverse Leakage Current
•Surge
Overload Rating to 170A Peak
•Ideal
for Printed Circuit Board Applications
•Plastic
Material - UL Flammability
Classification 94V-0
•UL
Listed Under Recognized Component
Index, File Number E94661
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
Dim
A
GBJ
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
4.40
3.40
3.10
2.50
0.60
10.80
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
4.80
3.80
3.40
2.90
0.80
11.20
L
K
A
B
M
B
C
D
E
_
J
H
I
S
P
C
R
N
G
H
I
J
K
L
M
D
3.0 X 45°
MECHANICAL DATA
•Case:
Molded Plastic
•Terminals:
Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity:
Molded on Body
•Mounting:
Through Hole for #6 Screw
•Mounting
Torque: 5.0 in-lbs Maximum
•Weight:
6.6 grams (approx.)
•Marking:
Type Number
G
E
E
N
P
R
S
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25℃ unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
@ TC= 110℃
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element
Peak Reverse Current
at Rated DC Blocking Voltage
@ IF = 4.0A
@TC = 25℃
@ TC = 125℃
VFM
IR
I2t
Cj
R_JC
Tj, TSTG
1.0
5.0
500
120
55
1.8
-55 to +150
V
IFSM
170
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
35
70
140
280
8.0
420
560
700
V
A
50
100
200
400
600
800
1000
V
GBJ
8005
GBJ
801
GBJ
802
GBJ
804
GBJ
806
GBJ
808
GBJ
810
Unit
μ
A
A2s
pF
℃/W
℃
I2t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance per Element (Note 2)
Typical Thermal Resistance, Junction to Case (Note 3)
Operating and Storage Temperature Range
Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 100 x 100 x 1.6mm aluminum plate heat sink.
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DEVICE CHARACTERISTICS
GBJ8005 THRU GBJ810
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
10
I
O
, AVERAGE RECTIFIED CURRENT (A)
8
With heatsink
1.0
6
4
Without heatsink
0.1
2
Resistive or
Inductive load
T
j
= 25
°
C
Pulse width = 300
µ
s
0
25
50
75
100
125
150
0.01
0
0.4
0.8
1.2
1.6
1.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics (per element)
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
180
I
FSM
, PEAK FWD SURGE CURRENT (A)
T
j
= 150
°
C
120
C
j
, JUNCTION CAPACITANCE (pF)
160
Single half-sine-wave
(JEDEC method)
100
T
j
= 25
°
C
f = 1MHz
10
80
40
0
1
1
10
100
1
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Surge Current
I
R
, INSTANTANEOUS REVERSE CURRENT (
µ
A)
1000
100
T
j
= 125
°
C
T
j
= 100
°
C
10
1.0
T
j
= 50
°
C
T
j
= 25
°
C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
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