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GBL10-G

Description
4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size67KB,3 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

GBL10-G Overview

4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

GBL10-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionR-PSIP-T4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current125 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current4 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Glass Passivated Bridge Rectifiers
GBL005-G Thru. GBL10-G
Reverse Voltage: 50 to 1000V
Forward Current: 4.0A
RoHS Device
Features
-Rating to 1000V PRV
-Surge overload rating - 125 amperes peak.
0.098(2.5)
*45°
Cha mfer
2GBJ
0.81(20.6)
0.77(19.6)
0.142(3.6)
0.133(3.4)
Mechanical Data
-Epoxy: U/L 94-V0 rate flame retardant.
-Case: Molded plastic, 2GBJ
-Polarit:As marked on Body
-Mounting position: Any
-Weight: 2.151grams
0.106(2.7)
0.091(2.3)
0.44(11.2)
0.42(10.7)
+
-
0.043(1.1)
0.56(14.2) 0.035(0.9)
0.50(12.7)
0.059(1.5)
0.051(1.3)
0.210(5.3)
0.190(4.8)
0.210(5.3)
0.190(4.8)
0.210(5.3)
0.190(4.8)
0.020(0.51)
0.015(0.38)
0.045(1.14)
0.035(0.90)
Dimensions in inches and (millimeter)
Maximum ratings and electrical characteristics
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
O
Parameter
Maximum Reverse Peak Repetitive Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Output Current @T
A
=50°C
Peak Forward Surage Current ,
8.3ms Single Half Sine-Wave
Super Imposed On Rated Load
Maximum Forward Voltage Drop
Per Bridge Element at 4.0A Peak
Maximum Reverse Current At Rate
DC Blocking Voltage
Maximum Reverse Current At Rate
DC Blocking Voltage @T
J
=100°C
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
GBL005-G GBL01-G
50
35
50
100
70
100
GBL02-G
200
140
200
GBL04-G
400
280
400
4.0
GBL06-G
600
420
600
GBL08-G
800
560
800
GBL10-G
1000
700
1000
Unit
V
V
V
A
I
FSM
125
A
V
F
I
R
I
R
T
J
T
STG
1.1
10.0
1.0
-55 to +150
-55 to +150
V
μA
mA
O
C
C
O
Notes:
1. Mounting Conditions,0.5” lead length maximum.
REV:A
QW-BBR52
Page 1
Comchip Technology CO., LTD.

GBL10-G Related Products

GBL10-G GBL005-G GBL01-G GBL02-G GBL04-G
Description 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
package instruction R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
Reach Compliance Code compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED
Minimum breakdown voltage 1000 V 50 V 100 V 200 V 400 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 code R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
Maximum non-repetitive peak forward current 125 A 125 A 125 A 125 A 125 A
Number of components 4 4 4 4 4
Phase 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 4 A 4 A 4 A 4 A 4 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum repetitive peak reverse voltage 1000 V 50 V 100 V 200 V 400 V
surface mount NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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