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SND410

Description
Power Field-Effect Transistor, 20A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size66KB,1 Pages
ManufacturerSilicon Transistor Corp.oration
Download Datasheet Parametric View All

SND410 Overview

Power Field-Effect Transistor, 20A I(D), 400V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SND410 Parametric

Parameter NameAttribute value
MakerSilicon Transistor Corp.oration
package instructionFLANGE MOUNT, R-MSFM-T6
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-T6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON
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