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GFC430

Description
N Channel Power MOSFET with low RDS(on)
File Size89KB,1 Pages
ManufacturerGSG
Websitehttp://www.gsg-asia.com/
Download Datasheet View All

GFC430 Overview

N Channel Power MOSFET with low RDS(on)

Gunter Semiconductor GmbH
N Channel Power MOSFET with low R
DS(on)
GFC430
Chip Specification
General Description:
* Advanced Process Technology
* Dynamic dV/dt Rating
* 150℃ Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Low R
DS(on)
Mechanical Data:
D15
Dimension
2.92mm x 4.45mm
400
µ
m
Thickness:
Metallization:
Al
Top :
:
CrNiAg / Au
Backside :
Suggested Bonding Conditions:
Die Mounting:
Solder Perform
95/5 PbSn or 92.5./2.5/5 PbAgIn
Source Bonding Wire:
8 mil Al
Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage
Static Drain-to - Source On-resistance
Continuous Drain current ( in target package)
Continuous Drain current ( in target package)
Operation Junction
Storage Temperature
@Ta=25℃
Symbol
V(BR)DSS
RDS(ON)
ID@25℃
ID@100℃
Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ
VGS=10V, ID=3.0A
VGS=10V
VGS=10V
500
1.5
5
3.2
-55~150
-55~150
V
A
A
T
STR
Target Device: IRF830
TO-220AB
P
D
74
W
@Tc=25℃
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