BC337/338
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
•
Suitable for AF-Driver stages and low power output stages
•
Complement to BC337/BC328
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Emitter Voltage
: BC337
: BC338
Collector-Emitter Voltage
: BC337
: BC338
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CES
50
30
V
CEO
45
25
5
800
625
150
-55 ~ 150
V
V
V
mA
mW
°C
°C
1. Collector 2. Base 3. Emitter
V
V
Rating
Unit
V
EBO
I
C
P
C
T
J
T
STG
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector Emitter Breakdown Voltage
: BC337
: BC338
Collector Emitter Breakdown Voltage
: BC337
: BC338
Emitter Base Breakdown Voltage
Collector Cut-off Current
: BC337
: BC338
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Collector Base Capacitance
Symbol
BV
CEO
Test Conditions
I
C
=10mA, I
B
=0
45
25
BV
CES
I
C
=0.1mA, I
B
=0
50
30
-5
2
2
100
60
100
100
630
0.7
1.2
100
12
V
V
V
nA
nA
V
V
Min
Typ
Max
Unit
BV
EBO
I
CES
I
E
=0.1mA, I
C
=0
V
CE
=45V, I
B
=0
V
CE
=25V, I
B
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=300mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, f=1MHz
h
FE
1
h
FE
2
V
CE
(sat)
V
BE
(on)
f
T
C
CBO
V
V
MHz
pF
h
FE
CLASSIFICATION
Classification
h
FE
h
FE2
16
100-250
60-
25
160-400
100-
40
250-630
170-
Rev. B
©
1999 Fairchild Semiconductor Corporation
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not intended to be an exhaustive list of all such trademarks.
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2
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effectiveness.
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
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