BSS139L6906 datasheet, PDF - EEWORLD Datasheet

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BSS139L6906: DescriptionSmall Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size230KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSS139L6906 Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS139L6906 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	0.1 A
Maximum drain current (ID)	0.1 A
Maximum drain-source on-resistance	30 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.3 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

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BSS139

SIPMOS

Small-Signal-Transistor

Features

• N-channel

• Depletion mode

• dv /dt rated

• Available with

GS(th)

indicator on reel

• Pb-free lead-plating; RoHS compliant

Product Summary

DS(on),max

DSS,min

250

0.03

Ω

PG-SOT-23

Type

BSS139

Package

PG-SOT-23

Tape and Reel Information

L6327: 3000 pcs/reel

L6906: 3000 pcs/reel sorted in

GS(th)

bands

Marking

STs

Pb-free

Yes

Maximum ratings,

=25 °C, unless otherwise specified

Parameter

Continuous drain current

Symbol Conditions

=25 °C

=70 °C

Pulsed drain current

Reverse diode dv /dt

Gate source voltage

ESD sensitivity (HBM) as per

MIL-STD 883

Power dissipation

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

Value

0.10

0.08

0.4

±20

Class 1

Unit

D,pulse

dv /dt

=25 °C

=0.1 A,V

=200 V,

di /dt =200 A/µs,

j,max

=150 °C

kV/µs

tot

stg

=25 °C

0.36

-55 ... 150

55/150/56

°C

see table on next page and diagram 11

Rev. 1.62

page 1

2006-11-27

BSS139L6906 Related Products

	BSS139L6906	BSS139L6327	BSS139E6906	BSS139E6327
Description	Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3	Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 3 PIN	Small Signal Field-Effect Transistor, 0.1A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V	250 V	250 V
Maximum drain current (Abs) (ID)	0.1 A	0.1 A	0.1 A	0.1 A
Maximum drain current (ID)	0.1 A	0.1 A	0.1 A	0.1 A
Maximum drain-source on-resistance	30 Ω	30 Ω	30 Ω	30 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	3.3 pF	3.3 pF	3.3 pF	3.3 pF
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.36 W	0.36 W	0.36 W	0.36 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Maker	Infineon	-	Infineon	Infineon
Humidity sensitivity level	1	1	-	1

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