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IS61DDPB451236C-500M3I

Description
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165
Categorystorage    storage   
File Size926KB,32 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
Download Datasheet Parametric View All

IS61DDPB451236C-500M3I Overview

DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165

IS61DDPB451236C-500M3I Parametric

Parameter NameAttribute value
MakerIntegrated Silicon Solution ( ISSI )
package instructionLBGA,
Reach Compliance Codeunknow
ECCN code3A991.B.2.A
Maximum access time0.45 ns
JESD-30 codeR-PBGA-B165
length17 mm
memory density18874368 bi
Memory IC TypeDDR SRAM
memory width36
Number of functions1
Number of terminals165
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.89 V
Minimum supply voltage (Vsup)1.71 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width15 mm
IS61DDPB41M18C/C1/C2
IS61DDPB451236C/C1/C2
1Mx18, 512Kx36
18Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
(2.5 Cycle Read Latency)
FEATURES
512Kx36 and 1Mx18 configuration available.
On-chip Delay-Locked Loop (DLL) for wide data
valid window.
Common I/O read and write ports.
Synchronous pipeline read with self-timed late write
operation.
Double Data Rate (DDR) interface for read and write
input ports.
2.5 cycle read latency.
Fixed 4-bit burst for read and write operations.
Clock stop support.
Two input clocks (K and K#) for address and control
registering at rising edges only.
Two echo clocks (CQ and CQ#) that are delivered
simultaneously with data.
+1.8V core power supply and 1.5V to 1.8V VDDQ,
used with 0.75 to 0.9V VREF.
HSTL input and output interface.
Registered addresses, write and read controls, byte
writes, data in, and data outputs.
Full data coherency.
Boundary scan using limited set of JTAG 1149.1
functions.
Byte write capability.
Fine ball grid array (FBGA) package:
13mm x 15mm & 15mm x 17mm body size
165-ball (11 x 15) array
Programmable impedance output drivers via 5x
user-supplied precision resistor.
Data Valid Pin (QVLD).
ODT (On Die Termination) feature is supported
optionally on data inputs, K/K#, and BW
x
#.
The end of top mark (C/C1/C2) is to define options.
IS61DDPB451236C : Don’t care ODT function
and pin connection
IS61DDPB451236C1: Option1
IS61DDPB451236C2: Option2
Refer to more detail description at page 6 for each
ODT option.
APRIL 2016
DESCRIPTION
The 18Mb IS61DDPB451236C/C1/C2 and IS61DDPB41M18C/C1/C2
are synchronous, high-performance CMOS static random access
memory (SRAM) devices.
These SRAMs have a common I/O bus. The rising edge of K clock
initiates the read/write operation, and all internal operations are self-
timed. Refer to the
Timing Reference Diagram for Truth Table
for a
description of the basic operations of these DDR-IIP (Burst of 4) CIO
SRAMs.
Read and write addresses are registered on alternating rising
edges of the K clock. Reads and writes are performed in
double data rate.
The following are registered internally on the rising edge of
the K clock:
Read/write address
Read enable
Write enable
Byte writes
Data-in for first and third burst addresses
Data-out for second and fourth burst addresses
The following are registered on the rising edge of the K#
clock:
Byte writes
Data-in for second and fourth burst addresses
Data-out for first and third burst addresses
Byte writes can change with the corresponding data-in to
enable or disable writes on a per-byte basis. An internal write
buffer enables the data-ins to be registered one cycle after
the write address. The first data-in burst is clocked one cycle
later than the write command signal, and the second burst is
timed to the following rising edge of the K# clock. Two full
clock cycles are required to complete a write operation.
During the burst read operation, the data-outs from the first
bursts are updated from output registers of the third rising
edge of the K# clock (starting two and half cycles later after
read command). The data-outs from the second burst are
updated with the fourth rising edge of the K clock where read
command receives at the first rising edge of K.
The device is operated with a single +1.8V power supply and
is compatible with HSTL I/O interfaces.
Copyright © 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc.- www.issi.com
Rev. A
03/23/2016
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