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BCR141L3

Description
NPN Silicon Digital Transistor
CategoryDiscrete semiconductor    The transistor   
File Size496KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BCR141L3 Overview

NPN Silicon Digital Transistor

BCR141L3 Parametric

Parameter NameAttribute value
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BCR141.../SEMH1
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=22kΩ,
R
2
=22kΩ)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR141/F/L3
BCR141T/W
C
3
BCR141S/U
SEMH1
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR141
BCR141F
BCR141L3
BCR141S
BCR141T
BCR141U
BCR141W
SEMH1
Marking
WDs
WDs
WD
WDs
WDs
WDs
WDs
WD
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004

BCR141L3 Related Products

BCR141L3 BCR141T BCR141F BCR141U
Description NPN Silicon Digital Transistor NPN Silicon Digital Transistor NPN Silicon Digital Transistor NPN Silicon Digital Transistor
package instruction CHIP CARRIER, R-XBCC-N3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G6
Contacts 3 3 3 6
Reach Compliance Code compli unknow unknow compli
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-XBCC-N3 R-PDSO-G3 R-PDSO-F3 R-PDSO-G6
Number of components 1 1 1 2
Number of terminals 3 3 3 6
Package body material UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form NO LEAD GULL WING FLAT GULL WING
Terminal location BOTTOM DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 130 MHz 130 MHz 130 MHz
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