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BCR141U

Description
NPN Silicon Digital Transistor
CategoryDiscrete semiconductor    The transistor   
File Size496KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BCR141U Overview

NPN Silicon Digital Transistor

BCR141U Parametric

Parameter NameAttribute value
MakerInfineon
Parts packaging codeSC-74
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Shell connectionISOLATED
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
BCR141.../SEMH1
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=22kΩ,
R
2
=22kΩ)
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR141/F/L3
BCR141T/W
C
3
BCR141S/U
SEMH1
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR141
BCR141F
BCR141L3
BCR141S
BCR141T
BCR141U
BCR141W
SEMH1
Marking
WDs
WDs
WD
WDs
WDs
WDs
WDs
WD
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004

BCR141U Related Products

BCR141U BCR141L3 BCR141T BCR141F
Description NPN Silicon Digital Transistor NPN Silicon Digital Transistor NPN Silicon Digital Transistor NPN Silicon Digital Transistor
package instruction SMALL OUTLINE, R-PDSO-G6 CHIP CARRIER, R-XBCC-N3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3
Contacts 6 3 3 3
Reach Compliance Code compli compli unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-PDSO-G6 R-XBCC-N3 R-PDSO-G3 R-PDSO-F3
Number of components 2 1 1 1
Number of terminals 6 3 3 3
Package body material PLASTIC/EPOXY UNSPECIFIED PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W 0.25 W 0.25 W 0.25 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING NO LEAD GULL WING FLAT
Terminal location DUAL BOTTOM DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 130 MHz 130 MHz 130 MHz
Maker Infineon - Infineon Infineon
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