BCR141.../SEMH1
NPN Silicon Digital Transistor
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Built in bias resistor (R
1
=22kΩ,
R
2
=22kΩ)
•
For 6-PIN packages: two (galvanic) internal
isolated transistors with good matching
in one package
BCR141/F/L3
BCR141T/W
C
3
BCR141S/U
SEMH1
C1
6
B2
5
E2
4
R
1
R
1
R
2
TR2
R
1
R
2
TR1
R
2
1
B
2
E
EHA07184
1
E1
2
B1
3
C2
EHA07174
Type
BCR141
BCR141F
BCR141L3
BCR141S
BCR141T
BCR141U
BCR141W
SEMH1
Marking
WDs
WDs
WD
WDs
WDs
WDs
WDs
WD
1=B
1=B
1=B
1=B
1=B
Pin Configuration
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Package
SOT23
TSFP-3
TSLP-3-4
SC75
SOT323
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
1
Jun-14-2004
BCR141.../SEMH1
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on voltage
Collector current
Total power dissipation-
BCR141,
T
S
≤
102°C
BCR141F,
T
S
≤
128°C
BCR141L3,
T
S
≤
135°C
BCR141S,
T
S
≤
115°C
BCR141T,
T
S
≤
109°C
BCR141U,
T
S
≤
118°C
BCR141W,
T
S
≤
124°C
SEMH1,
T
S
≤
75°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BCR141
BCR141F
BCR141L3
BCR141S
BCR141T
BCR141U
BCR141W
SEMH1
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
Value
50
50
10
30
100
200
250
250
250
250
250
250
250
Unit
V
mA
mW
T
j
T
stg
Symbol
R
thJS
150
-65 ... 150
Value
≤
240
≤
90
≤
60
≤
140
≤
165
≤
133
≤
105
≤
300
°C
Unit
K/W
2
Jun-14-2004
BCR141.../SEMH1
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
Collector-base cutoff current
V
CB
= 40 V,
I
E
= 0
V
(BR)CBO
I
CBO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R
1
R
1
/
R
2
50
-
-
50
-
0.8
1
15
0.9
-
-
-
-
-
-
-
22
1
-
100
350
-
0.3
1.5
2.5
29
1.1
kΩ
nA
µA
-
V
Emitter-base cutoff current
V
EB
= 10 V,
I
C
= 0
DC current gain
1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
-
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
1Pulse test: t < 300µs; D < 2%
f
T
C
cb
-
-
130
3
-
-
MHz
pF
3
Jun-14-2004
BCR141.../SEMH1
DC current gain
h
FE
=
ƒ
(I
C
)
V
CE
= 5 V (common emitter configuration)
10
3
Collector-emitter saturation voltage
V
CEsat
=
ƒ
(I
C
),
h
FE
= 20
10
2
-
mA
h
FE
10
2
I
C
10
1
10
1
10
0 -1
10
0
1
10
10
mA
10
2
10
0
0
0.2
0.4
0.6
V
1
I
C
V
CEsat
Input on Voltage
V
i
(on)
=
ƒ
(I
C
)
V
CE
= 0.3V (common emitter voltage)
10
2
Input off voltage
V
i(off)
=
ƒ
(I
C
)
V
CE
= 5V (common emitter voltage)
10
1
mA
mA
10
0
10
1
I
C
I
C
10
-1
10
0
10
-2
10
-1 -1
10
0
1
10
10
V
10
2
10
-3
0
0.5
1
1.5
2
V
3
V
i(on)
V
i(off)
4
Jun-14-2004
BCR141.../SEMH1
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR141
300
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR141F
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR141L3
300
Total power dissipation
P
tot
=
ƒ
(T
S
)
BCR141S
300
mW
mW
P
tot
150
P
tot
120
°C
200
200
150
100
100
50
50
0
0
20
40
60
80
100
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
5
Jun-14-2004
Microcontroller MCU
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