ES1GJ datasheet, PDF - EEWORLD Datasheet

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ES1GJ: DescriptionUltrafast Recovery Diode, 1A, 400V, 30A, 1.25V, 1A, 5μA, 35nS; CategoryDiscrete semiconductor Super fast recovery diode; File Size1MB，2 Pages; ManufacturerLGE; Websitehttp://www.luguang.cn/web_en/index.html

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ES1GJ Overview

Ultrafast Recovery Diode, 1A, 400V, 30A, 1.25V, 1A, 5μA, 35nS

ES1GJ Parametric

Parameter Name	Attribute value
Case Style	SMAJ
IF(A)	1
VRRM (V)	400
IFSM (A)	30
VF (V)	1.25
@ IF (A)	1
Maximum reverse current	5
TRR(nS)	35
class	Diodes

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Surface Mount Rectifiers

ES1AJ-ES1JJ

Features

Low cost

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with Alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

VOLTAGE RANGE: 50 ---

600

CURRENT: 1.0 A

SMAJ

4.3± 0.1

1.95± 0.25

Marking Information

Dimensions in millimeters

XXXX

LGE：Lu Guang Electronic

XXXX：marking code (ES1A-ES1J)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.

0.203MAX

Case:JEDEC SMAJ,molded plastic

Terminals:

Solderable

per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.003 ounces,0.084 grams

Mounting position: Any

5.6± 0.2

2.35± 0.1

1.3± 0.2

2.6± 0.15

0.2± 0.05

Mechanical Data

ES1A

ES1BJ

ES1CJ ES1DJ ES1G

ES1HJ ES1JJ

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

=75

Peak forward surge current

8.3ms single half-sine-wave

superimposed on rated load

=125

UNITS

RRM

RMS

F(AV)

100

150

105

150

200

140

200

1.0

400

280

400

500

350

500

600

420

600

FSM

STG

0.98

1.25

5.0

200

- 55 ---- + 150

1.70

Maximum instantaneous forward voltage at1.0 A

Maximum reverse current

at rated DC blocking voltage

Typical reverse recovery time

Typical junction capacitance

Typical thermal resistance

=25

=125

(Note1)

(Note2)

(Note3)

Operating junction temperature range

Storage temperature range

NOTE: 1. Measured with I

=0.5A, I

=1A, I

=0.25A.

2. Measured at 1.0MH

and applied reverse voltage of 4.0V DC.

3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas

Revision:20170701-P1

www.lgesemi

mail:lge@lgesemi.com

ES1GJ Related Products

	ES1GJ	ES1AJ	ES1BJ	ES1CJ	ES1DJ	ES1HJ	ES1JJ
Description	Ultrafast Recovery Diode, 1A, 400V, 30A, 1.25V, 1A, 5μA, 35nS	Ultrafast Recovery Diode, 1A, 50V, 30A, 0.98V, 1A, 5μA, 25nS	Ultrafast Recovery Diode, 1A, 100V, 30A, 0.98V, 1A, 5μA, 25nS	Ultrafast Recovery Diode, 1A, 150V, 30A, 0.98V, 1A, 5μA, 25nS	Ultrafast Recovery Diode, 1A, 200V, 30A, 0.98V, 1A, 5μA, 25nS	Ultrafast Recovery Diode, 1A, 500V, 30A, 1.7V, 1A, 5μA, 35nS	Ultrafast Recovery Diode, 1A, 600V, 30A, 1.7V, 1A, 5μA, 35nS
Case Style	SMAJ	SMAJ	SMAJ	SMAJ	SMAJ	SMAJ	SMAJ
IF(A)	1	1	1	1	1	1	1
VRRM (V)	400	50	100	150	200	500	600
IFSM (A)	30	30	30	30	30	30	30
VF (V)	1.25	0.98	0.98	0.98	0.98	1.7	1.7
@ IF (A)	1	1	1	1	1	1	1
Maximum reverse current	5	5	5	5	5	5	5
TRR(nS)	35	25	25	25	25	35	35
class	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes	Diodes

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