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ES1CJ

Description
Ultrafast Recovery Diode, 1A, 150V, 30A, 0.98V, 1A, 5μA, 25nS
CategoryDiscrete semiconductor    Super fast recovery diode   
File Size1MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric Compare View All

ES1CJ Overview

Ultrafast Recovery Diode, 1A, 150V, 30A, 0.98V, 1A, 5μA, 25nS

ES1CJ Parametric

Parameter NameAttribute value
Case StyleSMAJ
IF(A)1
VRRM (V)150
IFSM (A)30
VF (V)0.98
@ IF (A)1
Maximum reverse current5
TRR(nS)25
classDiodes
Surface Mount Rectifiers
ES1AJ-ES1JJ
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 ---
600
V
CURRENT: 1.0 A
SMAJ
4.3± 0.1
1.95± 0.25
Marking Information
Dimensions in millimeters
XXXX
LGE:Lu Guang Electronic
XXXX:marking code (ES1A-ES1J)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
0.203MAX
Case:JEDEC SMAJ,molded plastic
Terminals:
Solderable
per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.084 grams
Mounting position: Any
5.6± 0.2
2.35± 0.1
1.3± 0.2
2.6± 0.15
0.2± 0.05
Mechanical Data
ES1A
J
ES1BJ
ES1CJ ES1DJ ES1G
J
ES1HJ ES1JJ
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
A
=75
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
1.0
400
280
400
500
350
500
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
30
1.25
5.0
200
35
19
50
- 55 ---- + 150
- 55 ---- + 150
1.70
A
V
A
ns
pF
/W
Maximum instantaneous forward voltage at1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=125
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied reverse voltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com

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ES1CJ ES1AJ ES1BJ ES1DJ ES1GJ ES1HJ ES1JJ
Description Ultrafast Recovery Diode, 1A, 150V, 30A, 0.98V, 1A, 5μA, 25nS Ultrafast Recovery Diode, 1A, 50V, 30A, 0.98V, 1A, 5μA, 25nS Ultrafast Recovery Diode, 1A, 100V, 30A, 0.98V, 1A, 5μA, 25nS Ultrafast Recovery Diode, 1A, 200V, 30A, 0.98V, 1A, 5μA, 25nS Ultrafast Recovery Diode, 1A, 400V, 30A, 1.25V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 500V, 30A, 1.7V, 1A, 5μA, 35nS Ultrafast Recovery Diode, 1A, 600V, 30A, 1.7V, 1A, 5μA, 35nS
Case Style SMAJ SMAJ SMAJ SMAJ SMAJ SMAJ SMAJ
IF(A) 1 1 1 1 1 1 1
VRRM (V) 150 50 100 200 400 500 600
IFSM (A) 30 30 30 30 30 30 30
VF (V) 0.98 0.98 0.98 0.98 1.25 1.7 1.7
@ IF (A) 1 1 1 1 1 1 1
Maximum reverse current 5 5 5 5 5 5 5
TRR(nS) 25 25 25 25 35 35 35
class Diodes Diodes Diodes Diodes Diodes Diodes Diodes
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