IL400
Vishay Semiconductors
Optocoupler, PhotoSCR Output, 400 V
RM
, 1 A surge current
Features
•
•
•
•
•
•
•
•
•
Turn on current (I
FT
), 5.0 mA typical
Gate trigger current (I
GT
), 20
µA
Surge anode current, 1.0 AMP
Blocking voltage, 400 V
Gate trigger voltage (V
GT
), 0.6 Volt
Isolation Test Voltage, 5300 V
RMS
Solid State Reliability
Standard DIP Package
Lead-free component
A 1
C 2
NC 3
6 G
5 A
4 C
i179006
e3
Pb
Pb-free
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Order Information
Part
IL400
IL400-X007
IL400-X009
Remarks
Blocking voltage, 400 V, DIP-6
Blocking voltage, 400 V, SMD-6 (option 7)
Blocking voltage, 400 V, SMD-6 (option 9)
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
For additional information on the available options refer to
Option Information.
Description
The IL400 is an optically coupled SCR with a gallium
arsenide infrared emitter and a silicon photo SCR
sensor. Switching can be achieved while maintaining
a high degree of isolation between triggering and load
circuits. The IL400 can be used in SCR triac and solid
state relay applications where high blocking voltages
and low input current sensitivy are required.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Peak reverse voltage
Peak forward current (100
µs,
1 % duty
cycle)
Forward continuous current
Power dissipation
Derate linearly from 25 °C
Document Number 83626
Rev. 1.5, 26-Oct-04
Test condition
Symbol
V
RM
I
FM
I
F
P
diss
Value
6.0
1.0
60
100
1.3
Unit
V
A
mA
mW
mW/°C
www.vishay.com
1
IL400
Vishay Semiconductors
Output
Parameter
Reverse gate voltage
Anode voltage (DC or AC Peak)
Anode current
Surge anode current (10 ms duration)
Surge gate current (5.0 ms duration)
Power dissipation
Derate linearly from 25 °C
Test condition
Symbol
V
RG
V
A
I
A
I
AS
I
GS
P
diss
Value
6.0
400
100
1.0
200
200
2.11
Unit
V
V
mA
A
mA
mW
mW/°C
Coupler
Parameter
Isolation voltage
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Total package dissipation
Derate linearly from 25 °
Operating temperature
Storage temperature
T
amb
T
stg
Test condition
Symbol
V
ISO
R
IO
R
IO
Value
5300
> 10
12
> 10
12
250
2.63
- 55 to +100
- 55 to +150
Unit
V
RMS
Ω
Ω
mW
mW/°C
°C
°C
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse voltage
Reverse current
Test condition
I
F
= 20 mA
I
R
= 10
µA
V
R
= 5.0 V
Symbol
V
F
V
R
I
R
5.0
10
Min
Typ.
1.2
Max
1.5
Unit
V
V
µA
Output
Parameter
Forward blocking voltage
Reverse blocking voltage
On-state voltage
Holding current
Gate trigger voltage
Forward leakage current
Reverse leakage current
Gate trigger current
Test condition
R
GK
= 10 KΩ , T
A
= 100 °C ,
I
d
= 150
µA
R
GK
= 10 KΩ , T
A
= 100 °C ,
I
d
= 150
µA
I
T
= 100 mA
R
GK
= 27 KΩ , V
FX
= 50 V
V
FX
= 100 V, R
GK
= 27 KΩ,
R
L
= 10 KΩ
R
GK
= 27 KΩ , I
F
= 0
R
GK
= 27 KΩ , I
F
= 0
V
FX
= 100 V, R
GK
= 27 KΩ,
R
L
= 10 KΩ
Symbol
V
DRM
V
DRRM
V
t
I
H
V
GT
I
D
I
R
I
GT
0.6
0.2
0.2
20
Min
400
400
1.2
500
1.0
2.0
2.0
50
Typ.
Max
Unit
V
V
V
µA
V
µA
µA
µA
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2
Document Number 83626
Rev. 1.5, 26-Oct-04
IL400
Vishay Semiconductors
Coupler
Parameter
Turn-on current
Capacitance (input-output)
Test condition
V
FX
= 100 V
f = 1.0 MHz
Symbol
I
FT
C
IO
Min
0.5
Typ.
5.0
Max
10.0
2
Unit
mA
pF
Package Dimensions in Inches (mm)
pin one ID
3
.248 (6.30)
.256 (6.50)
4
2
1
5
6
ISO Method A
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
i178004
.048 (0.45)
.022 (0.55)
.130 (3.30)
.150 (3.81)
.300 (7.62)
typ.
18°
.031 (0.80) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
3°–9°
.010 (.25)
typ.
.300–.347
(7.62–8.81)
.114 (2.90)
.130 (3.0)
Option 7
.300 (7.62)
TYP
.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18494
Document Number 83626
Rev. 1.5, 26-Oct-04
www.vishay.com
3
IL400
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 83626
Rev. 1.5, 26-Oct-04
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