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BCW66H

Description
800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size136KB,6 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BCW66H Overview

800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCW66H Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.33 W
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)170 MHz
VCEsat-Max0.7 V
Base Number Matches1
NPN Silicon AF Transistors
BCW 65
BCW 66
q
For general AF applications
q
High current gain
q
Low collector-emitter saturation voltage
q
Complementary types: BCW 67, BCW 68 (PNP)
Type
BCW 65 A
BCW 65 B
BCW 65 C
BCW 66 F
BCW 66 G
BCW 66 H
Marking
EAs
EBs
ECs
EFs
EGs
EHs
Ordering Code
(tape and reel)
Q62702-C1516
Q62702-C1612
Q62702-C1479
Q62702-C1892
Q62702-C1526
Q62702-C1632
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
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