DATA SHEET
SEMICONDUCTOR
KBJ6005G THRU KBJ610G
6.0A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass
Passivated Die Construction
•High
Case Dielectric Strength of 1500VRMS
•Low
Reverse Leakage Current
•Surge
Overload Rating to 170A Peak
•Ideal
for Printed Circuit Board Applications
•Plastic
Material - UL Flammability
Classification 94V-0
•UL
Listed Under Recognized Component Index,
File Number E94661
•High
temperature soldering : 260 C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
O
KBJ( mm)
P
N
H
C
A
B
_
K
J
L
M
E
D
R
MECHANICAL DATA
•Case:
Molded Plastic
•Terminals:
Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity:
Molded on Body
•Mounting:
Through Hole for #6 Screw
•Mounting
Torque: 5.0 in-lbs Maximum
•Approx.
Weight: 4.6 grams
•Marking:
Type Number
G
KBJ
Max
Min
Dim
25.20
24.80
A
15.30
14.70
B
400 Nominal
C
17.80
17.20
D
1.10
0.90
E
7.70
7.30
G
3.10ψ 3.40ψ
H
3.70
3.30
J
2.10
1.90
K
9.70
9.30
L
2.90
2.50
M
3.80
3.40
N
4.80
4.40
P
0.80
0.60
R
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC = 100°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
(JEDEC method)
Forward Voltage per element @ IF = 6.0A
Peak Reverse Current @TC = 25°C
at Rated DC Blocking Voltage @ TC = 125°C
I2t Rating for Fusing (t < 8.3ms) (Note 3)
Typical Junction Capacitance per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
I2t
CJ
RθJA
Tj, TSTG
VFM
IRM
1.0
5.0
500
120
80
1.5
-55 to +150
V
μA
A2s
PF
℃/W
℃
IFSM
170
A
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
35
70
140
280
6.0
420
560
700
V
A
50
100
200
400
600
800
1000
V
KBJ
6005G
KBJ
601G
KBJ
602G
KBJ
604G
KBJ
606G
KBJ
608G
KBJ
610G
Unit
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.
3. Non-repetitive, for t > 1ms and < 8.3ms.
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REV.02 20120305
DEVICE CHARACTERISTICS
KBJ6005G THRU KBJ610G
I
O
, AVERAGE RECTIFIED CURRENT (A)
with heatsink
5
4
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
6
10
T
J
= 150°C
T
J
= 25°C
1.0
3
without heatsink
2
1
Resistive or
Inductive load
0.1
0
25
50
75
100
125
150
Pulse width = 300µs
0.01
0
0.4
0.8
1.2
1.6
1.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
T
C
, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
180
I
FSM
, PEAK FWD SURGE CURRENT (A)
T
j
= 150°C
120
C
j
, JUNCTION CAPACITANCE (pF)
160
Single half-sine-wave
(JEDEC method)
1000
f = 1MHz
T
j
= 25°C
80
100
40
0
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100
10
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
I
R
, INSTANTANEOUS REVERSE CURRENT (µA)
1000
T
J
= 150°C
100
T
J
= 125°C
T
J
= 100°C
10
1.0
T
J
= 25°C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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REV.02 20120305
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