KBP08 datasheet, PDF - EEWORLD Datasheet

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KBP08: Description1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size407KB，2 Pages; ManufacturerYEA SHIN TECHNOLOGY CO.,LTD; Websitehttp://www.yeashin.com/

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1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

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DATA SHEET

SEMICONDUCTOR

KBP005 THRU KBP10

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE

SILICON BRIDGE RECTIFIER

VOLTAGE RANGE-50 to 1000 Volts CURRENT-2.0 Amperes

FEATURES

•Ideal

for printed circuit board

•Surge

overload rating: 50 Amperes peak

•High

temperature soldering : 260

C / 10 seconds at terminals

•Pb

free product at available : 99% Sn above meet RoHS

environment substance directive request

.46 (

11.7)

.42 (

10.7

)

KBP/RS2 Unit:inch(mm)

.600 (

15.2)

.560 (

14.2

)

MECHANICAL DATA

•Case:Molded

plastic

•Epoxy:

UL 94V-0 rate flame retardant

•Lead:

MIL-STD-202E,Method 208 guaranteed

•Polarity:

Symbols molded or marked on body

•Mounting

position: Any

•Weight:

2.74 grams

.034 (

0.86

) DIA.

.028 (

0.71)

TYP

1.0

(

1.4

)

.160 (4.1)

.140 (3.6)

.153 (

3.9)

.130 (

3.3

)

.50

(

12.7

)MIN

(

15.2

)MIN

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

•Ratings

at 25

℃

ambient temperature unless otherwise specified.

•Single

phase, half wave, 60 Hz, resistive or inductive load.

•For

capacitive load, derate current by 20%.

SYMBOL

KBP005

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Output TA = 50℃

Peak Forward Surge Current 8.3 ms single half

sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage Drop per element at 1.0A

Maximum DC Reverse Current at

Rated DC Blocking Voltage per

element

I2t Rating for Fusing(t<8.3ms)

Typical Junction Capacitance(Note1)

Operating Temperature Range

Storage Temperature Range

@TA = 100℃

@TA = 25℃

VRRM

VRMS

VDC

IFSM

KBP01

100

KBP02

200

140

200

KBP04

400

280

400

2.0

KBP06

600

420

600

KBP08

800

560

800

KBP10

1000

700

1000

UNITS

Volts

Amps

1.0

Volts

µAmp

500

I2t

TSTG

-55 to + 150

A2Sec

℃

NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts

2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B with 0.47x0.47”(12x12mm)copperpads.

http://www.yeashin.com

REV.02 20120305

KBP08 Related Products

	KBP08	KBP005	KBP01	KBP02	KBP04	KBP06	KBP10
Description	1.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, SILICON, BRIDGE RECTIFIER DIODE	2 A, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	2 A, SILICON, BRIDGE RECTIFIER DIODE	2 A, SILICON, BRIDGE RECTIFIER DIODE

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