DATA SHEET
SEMICONDUCTOR
KBP005 THRU KBP10
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE
SILICON BRIDGE RECTIFIER
VOLTAGE RANGE-50 to 1000 Volts CURRENT-2.0 Amperes
FEATURES
•Ideal
for printed circuit board
•Surge
overload rating: 50 Amperes peak
•High
temperature soldering : 260
O
C / 10 seconds at terminals
•Pb
free product at available : 99% Sn above meet RoHS
environment substance directive request
AC
.46 (
11.7)
.42 (
10.7
)
KBP/RS2 Unit:inch(mm)
.600 (
15.2)
.560 (
14.2
)
MECHANICAL DATA
•Case:Molded
plastic
•Epoxy:
UL 94V-0 rate flame retardant
•Lead:
MIL-STD-202E,Method 208 guaranteed
•Polarity:
Symbols molded or marked on body
•Mounting
position: Any
•Weight:
2.74 grams
.034 (
0.86
) DIA.
.028 (
0.71)
TYP
1.0
(
1.4
)
.160 (4.1)
.140 (3.6)
.153 (
3.9)
.130 (
3.3
)
.
.50
(
12.7
)MIN
(
15.2
)MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
•Ratings
at 25
℃
ambient temperature unless otherwise specified.
•Single
phase, half wave, 60 Hz, resistive or inductive load.
•For
capacitive load, derate current by 20%.
SYMBOL
KBP005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output TA = 50℃
Peak Forward Surge Current 8.3 ms single half
sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per element at 1.0A
DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage per
element
I2t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance(Note1)
Operating Temperature Range
Storage Temperature Range
@TA = 100℃
@TA = 25℃
IR
VF
VRRM
VRMS
VDC
IO
IFSM
50
35
50
KBP01
100
70
100
KBP02
200
140
200
KBP04
400
280
400
2.0
KBP06
600
420
600
KBP08
800
560
800
KBP10
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
50
Amps
1.0
5
Volts
µAmp
500
I2t
CJ
TJ
TSTG
10
15
-55 to + 150
-55 to + 150
A2Sec
pF
℃
℃
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B with 0.47x0.47”(12x12mm)copperpads.
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