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M21L216128A-15J

Description
128 K x 16 SRAM HIGH SPEED CMOS SRAM
File Size214KB,14 Pages
ManufacturerETC1
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M21L216128A-15J Overview

128 K x 16 SRAM HIGH SPEED CMOS SRAM

$%
SRAM
FEATURES
M21L216128A
128 K x 16 SRAM
HIGH SPEED CMOS SRAM
ORDERING INFORMATION
44-pin 400mil SOJ
44-pin 400mil TSOP (TypeII)
Acess Time
(ns)
10
T
T
T
T
T
T
T
T
T
T
Fast access times : 10, 12, and 15ns
Fast
OE
access times : 5, 6, and 7ns
Single +3.3V
±
0.3V power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Center power and ground pins for greater noise immunity
Easy memory expansive with
CE
and
OE
options
Automatic
CE
power down
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PRODUCT NO.
M21L216128A-10J
M21L216128A-10T
M21L216128A-12J
M21L216128A-12T
M21L216128A-15J
M21L216128A-15T
PACKING
TYPE
SOJ
TSOP
12
SOJ
TSOP
SOJ
TSOP
15
GENERAL DESCRIPTION
The M21L216128A is a high speed, low power
asynchronous SRAM containing 2,097,152 bits and
organized as 131,072 by 16 bits, it is produced by high
performance CMOS process.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (
CE
), separate byte
enable controls (
LB
and
HE
) and output enable (
OE
) with this
organization.
PIN ASSIGNMENT
SOJ Top View
A4
A3
A2
A1
A0
CE
D Q1
D Q2
D Q3
DQ4
VCC
GND
DQ5
DQ6
DQ7
DQ8
WE
A16
A15
A14
A13
A12
TSOP (TypeII) Top View
A5
A6
A7
OE
HB
LB
DQ 16
DQ 15
DQ 14
DQ 13
GND
VC C
DQ 12
DQ 11
DQ 10
D Q9
NC
A8
A9
A10
A11
NC
A4
A3
A2
A1
A0
CE
D Q1
D Q2
D Q3
D Q4
VC C
GND
DQ5
DQ6
DQ7
DQ8
WE
A1 6
A1 5
A1 4
A1 3
A1 2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
HB
LB
DQ16
DQ15
DQ14
DQ13
GND
VCC
DQ12
DQ11
DQ10
D Q9
NC
A8
A9
A1 0
A1 1
NC
Elite Semiconduture Memory Technology Inc
Publication Date
:
Sep. 2000
Revision
:
1.0
1/14

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