BD825 datasheet, PDF - EEWORLD Datasheet

BD825: DescriptionTRANSISTOR,BJT,NPN,80V V(BR)CEO,1A I(C),TO-202AA; CategoryDiscrete semiconductor The transistor; File Size63KB，8 Pages; ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.); Websitehttps://www.nxp.com/

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BD825 Overview

TRANSISTOR,BJT,NPN,80V V(BR)CEO,1A I(C),TO-202AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Philips Semiconductors (NXP Semiconductors N.V.)
package instruction	,
Reach Compliance Code	unknow
Maximum collector current (IC)	1 A
Configuration	Single
Minimum DC current gain (hFE)	40
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	2 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	250 MHz

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D067

BD825; BD829

NPN power transistors

Product speciﬁcation

Supersedes data of 1997 Jun 20

File under Discrete Semiconductors, SC04

1998 May 29

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