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BF2030W

Description
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
CategoryDiscrete semiconductor    The transistor   
File Size14KB,2 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BF2030W Overview

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)

BF2030W Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (ID)0.04 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
BF 2030W
Silicon N-Channel MOSFET Tetrode
Preliminary data
For low noise, high gain controlled
input stages up to 1GHz
Operating voltage 5V
3
4
2
1
VPS05605
ESD: Electrostatic discharge
sensitive device, observe handling precaution
Type
Marking Ordering Code
Q62702-F1774
Pin Configuration
1=D
2=S
3 = G1
4 = G2
Package
SOT-343
BF 2030W NEs
Maximum Ratings
Parameter
Drain-source voltage
Symbol
Value
14
40
10
7
200
-55 ...+150
150
Unit
V
mA
V
mW
°C
V
DS
I
D
±
I
G1/2SM
+
V
G1SE
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation,
T
S
= 94 °C
Storage temperature
Channel temperature
P
tot
T
stg
T
ch
Thermal Resistance
Channel - soldering point
R
thchs
≤280
K/W
Semiconductor Group
Semiconductor Group
1
1
Jun-05-1998
1998-11-01

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BF2030W Q62702-F1774
Description Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
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