BF2040...
Silicon N-Channel MOSFET Tetrode
•
For low noise , high gain controlled
input stages up to 1GHz
•
Operating voltage 5 V
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BF2040
BF2040R
BF2040W
Maximum Ratings
Parameter
Package
SOT143
SOT143
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
Pin Configuration
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
Marking
NFs
NFs
NF
Symbol
V
DS
I
D
±I
G1/2SM
+V
G1SE
P
tot
Value
8
20
10
7
200
200
Unit
V
mA
V
mW
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1 (external biasing)
Total power dissipation
T
S
≤
76 °C, BF2040, BF2040R
T
S
≤
94 °C, BF2040W
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
BF2040, BF2040R
BF2040W
T
stg
T
ch
Symbol
R
thchs
-55 ... 150
150
°C
Value
≤
370
≤
280
Unit
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Feb-25-2004
BF2040...
Electrical Characteristics
Parameter
DC Characteristics
Drain-source breakdown voltage
I
D
= 20 µA,
V
G1S
= 0 ,
V
G2S
= 0
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 ,
V
DS
= 0
Gate1-source leakage current
V
G1S
= 5 V,
V
G2S
= 0 ,
V
DS
= 0
Gate2-source leakage current
V
G2S
= 5 V,
V
G1S
= 0 ,
V
DS
= 0
Drain current
V
DS
= 5 V,
V
G1S
= 0 ,
V
G2S
= 4 V
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 100
kΩ
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 20 µA
V
G2S(p)
0.3
0.7
-
V
G1S(p)
0.3
0.6
-
V
I
DSX
-
15
-
mA
I
DSS
-
-
50
µA
+I
G2SS
-
-
50
+I
G1SS
-
-
50
nA
+V
(BR)G2SS
6
-
15
+V
(BR)G1SS
6
-
15
V
(BR)DS
10
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Feb-25-2004
BF2040...
Electrical Characteristics
Parameter
Symbol
min.
AC Characteristics
- (verified by random sampling)
Forward transconductance
V
DS
= 5 V,
I
D
= 15 mA,
V
G2S
= 4 V
Gate1 input capacitance
V
DS
= 5 V,
I
D
= 15 mA,
V
G2S
= 4 V,
f
= 1 MHz
Output capacitance
V
DS
= 5 V,
I
D
= 15 mA,
V
G2S
= 4 V,
f
= 1 MHz
Power gain
V
DS
= 5 V,
I
D
= 15 mA,
V
G2S
= 4 V,
f
= 800 MHz
Noise figure
V
DS
= 5 V,
I
D
= 15 mA,
V
G2S
= 4 V,
f
= 800 MHz
Gain control range
V
DS
= 5 V,
V
G2S
= 4 ...0 V ,
f
= 800 GHz
∆G
p
45
50
-
F
-
1.6
2.2
dB
G
p
20
23
-
dB
C
dss
-
1.6
-
C
g1ss
-
2.9
3.4
pF
g
fs
37
42
-
mS
Values
typ.
max.
Unit
3
Feb-25-2004
BF2040...
Total power dissipation
P
tot
=
ƒ(T
S
)
BF2040, BFD2040R
Total power dissipation
P
tot
=
ƒ(T
S
)
BF2040W
220
mW
220
mA
180
160
180
160
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
P
tot
140
120
100
80
60
40
20
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
T
S
Drain current
I
D
=
ƒ(I
G1
)
V
G2S
= 4V
28
mA
24
22
20
Output characteristics
I
D
=
ƒ(V
DS
)
V
G2S
= 4 V
V
G1S
= Parameter
26
mA
22
20
18
1.3V
1.4V
I
D
I
D
18
16
14
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
µA
16
14
12
10
8
6
4
2
1V
1.1V
1.2V
90
0
0
1
2
3
4
5
6
7
8
V
10
I
G1
V
DS
4
Feb-25-2004
BF2040...
Gate 1 current
I
G1
=
ƒ(V
G1S
)
V
DS
= 5V
V
G2S
= Parameter
195
µA
4V
Gate 1 forward transconductance
g
fs
=
ƒ(I
D
)
V
DS
= 5V,
V
G2S
= Parameter
45
mS
4V
165
150
135
3.5V
35
30
25
20
2.5V
3.5V
3V
2.5V
2V
I
G1
120
105
90
75
60
45
30
15
0
0
0.4
0.8
1.2
1.6
2
2.4
V
2V
3V
g
fs
15
10
5
0
0
3.2
4
8
12
16
20
24
28
32
mA
40
V
G1S
I
D
Drain current
I
D
=
ƒ(V
G1S
)
V
DS
= 5V
V
G2S
= Parameter
28
mA
24
22
20
4V
3V
Drain current
I
D
=
ƒ(V
GG
)
V
DS
= 5V,
V
G2S
= 4V,
R
G1
= 80kΩ
(connected to
V
GG,
V
GG=gate1 supply voltage)
16
mA
12
I
D
16
14
12
10
8
6
4
2
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
V
1.5V
2V
I
D
18
10
8
6
4
2
2
0
0
1
2
3
V
5
V
G1S
V
GG
5
Feb-25-2004
京公网安备 11010802033920号
EEWORLD
