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SR830

Description
8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA
Categorysemiconductor    Discrete semiconductor   
File Size295KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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SR830 Overview

8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA

SR830 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC, TO-220A, 2 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current8 A
Maximum non-repetitive peak forward current150 A
DC COMPONENTS CO., LTD.
R
SR820
THRU
SR860
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE - 20 to 60 Volts
CURRENT - 8.0 Amperes
FEATURES
*
*
*
*
*
*
Low switching noise
Low forward voltage drop
Low thermal resistance
High current capability
High surge capabitity
High reliability
TO-220A
MECHANICAL DATA
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: MIL-STD-202E, Method 208 guaranteed
Polarity: As marked
Mounting position: Any
Weight: 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Case Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
NOTES : 1. Thermal Resistance Junction to Case per leg.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. Suffix "R" for Reverse Polarity.
@T
C
= 25
o
C
@T
C
= 100 C
o
SR820
20
14
20
SR830
30
21
30
SR840
40
28
40
8.0
150
SR850
50
35
50
SR860
60
42
60
UNITS
Volts
Volts
Volts
Amps
Amps
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
R
θ
J C
C
J
T
J
T
STG
.65
5.0
50
5.0
700
-65 to + 150
-65 to + 150
.75
Volts
mAmps
0
C/ W
pF
0
0
C
C
30

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SR830 SR860 SR850 SR840 SR820
Description 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA 8 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AA
Number of terminals 2 2 2 2 2
Number of components 1 1 1 1 1
Processing package description PLASTIC, TO-220A, 2 PIN PLASTIC, TO-220A, 2 PIN PLASTIC, TO-220A, 2 PIN PLASTIC, TO-220A, 2 PIN PLASTIC, TO-220A, 2 PIN
state ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Phase 1 1 1 1 1
Maximum repetitive peak reverse voltage 40 V 40 V 40 V 40 V 40 V
Maximum average forward current 8 A 8 A 8 A 8 A 8 A
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A
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