BFY181 datasheet, PDF - EEWORLD Datasheet

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BFY181: DescriptionHiRel NPN Silicon RF Transistor; File Size30KB，5 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BFY181 Overview

HiRel NPN Silicon RF Transistor

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BFY181

HiRel

NPN Silicon RF Transistor

•

HiRel

Discrete and Microwave Semiconductor

For low noise, high-gain broadband amplifiers at collector

currents from 0,5 mA to 12 mA.

Hermetically sealed microwave package

= 8 GHz

F = 2.2 dB at 2 GHz

Space Qualified

ESA/SCC Detail Spec. No.: 5611/006

Type Variant No. 03

ESD: Electrostatic discharge

sensitive device,

observe handling precautions!

Type

BFY181 (ql)

(ql) Quality Level:

Marking

Ordering Code

see below

Pin Configuration

Package

Micro-X1

P: Professional Quality,

H: High Rel Quality,

S: Space Quality,

ES: ESA Space Quality,

Ordering Code:

Q62702F1607

on request

Q62702F1715

(see order instructions for ordering example)

Semiconductor Group

1 of 5

Draft B, September 99

BFY181 Related Products

	BFY181	BFY181ES	BFY181P	BFY181H	BFY181S
Description	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor	HiRel NPN Silicon RF Transistor
Maker	-	Infineon	-	Infineon	Infineon
package instruction	-	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4
Contacts	-	4	4	4	4
Reach Compliance Code	-	compli	compli	compli	compli
ECCN code	-	EAR99	EAR99	EAR99	EAR99
Other features	-	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Shell connection	-	EMITTER	EMITTER	EMITTER	EMITTER
Maximum collector current (IC)	-	0.02 A	0.02 A	0.02 A	0.02 A
Collector-based maximum capacity	-	0.29 pF	0.29 pF	0.29 pF	0.29 pF
Collector-emitter maximum voltage	-	12 V	12 V	12 V	12 V
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	-	55	55	55	55
highest frequency band	-	L BAND	L BAND	L BAND	L BAND
JESD-30 code	-	X-CXMW-F4	X-CXMW-F4	X-CXMW-F4	X-CXMW-F4
JESD-609 code	-	e3	e3	e3	e3
Number of components	-	1	1	1	1
Number of terminals	-	4	4	4	4
Maximum operating temperature	-	200 °C	200 °C	200 °C	200 °C
Package body material	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package form	-	MICROWAVE	MICROWAVE	MICROWAVE	MICROWAVE
Polarity/channel type	-	NPN	NPN	NPN	NPN
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	YES	YES
Terminal surface	-	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
Terminal form	-	FLAT	FLAT	FLAT	FLAT
Terminal location	-	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
transistor applications	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	-	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	-	8000 MHz	8000 MHz	8000 MHz	8000 MHz

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