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BFY181P

Description
HiRel NPN Silicon RF Transistor
CategoryDiscrete semiconductor    The transistor   
File Size30KB,5 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BFY181P Overview

HiRel NPN Silicon RF Transistor

BFY181P Parametric

Parameter NameAttribute value
package instructionMICROWAVE, X-CXMW-F4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE
Shell connectionEMITTER
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.29 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)55
highest frequency bandL BAND
JESD-30 codeX-CXMW-F4
JESD-609 codee3
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeUNSPECIFIED
Package formMICROWAVE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationUNSPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1
BFY181
HiRel
NPN Silicon RF Transistor
HiRel
Discrete and Microwave Semiconductor
For low noise, high-gain broadband amplifiers at collector
currents from 0,5 mA to 12 mA.
Hermetically sealed microwave package
f
T
= 8 GHz
F = 2.2 dB at 2 GHz
Space Qualified
ESA/SCC Detail Spec. No.: 5611/006
Type Variant No. 03
4
3
1
2
ESD: Electrostatic discharge
sensitive device,
observe handling precautions!
Type
BFY181 (ql)
(ql) Quality Level:
Marking
-
Ordering Code
see below
Pin Configuration
C
E
B
E
Package
Micro-X1
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1607
on request
on request
Q62702F1715
(see order instructions for ordering example)
Semiconductor Group
1 of 5
Draft B, September 99

BFY181P Related Products

BFY181P BFY181 BFY181ES BFY181H BFY181S
Description HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor HiRel NPN Silicon RF Transistor
package instruction MICROWAVE, X-CXMW-F4 - MICROWAVE, X-CXMW-F4 MICROWAVE, X-CXMW-F4 MICROWAVE, X-CXMW-F4
Contacts 4 - 4 4 4
Reach Compliance Code compli - compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99
Other features LOW NOISE - LOW NOISE LOW NOISE LOW NOISE
Shell connection EMITTER - EMITTER EMITTER EMITTER
Maximum collector current (IC) 0.02 A - 0.02 A 0.02 A 0.02 A
Collector-based maximum capacity 0.29 pF - 0.29 pF 0.29 pF 0.29 pF
Collector-emitter maximum voltage 12 V - 12 V 12 V 12 V
Configuration SINGLE - SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 55 - 55 55 55
highest frequency band L BAND - L BAND L BAND L BAND
JESD-30 code X-CXMW-F4 - X-CXMW-F4 X-CXMW-F4 X-CXMW-F4
JESD-609 code e3 - e3 e3 e3
Number of components 1 - 1 1 1
Number of terminals 4 - 4 4 4
Maximum operating temperature 200 °C - 200 °C 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package form MICROWAVE - MICROWAVE MICROWAVE MICROWAVE
Polarity/channel type NPN - NPN NPN NPN
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount YES - YES YES YES
Terminal surface MATTE TIN - MATTE TIN MATTE TIN MATTE TIN
Terminal form FLAT - FLAT FLAT FLAT
Terminal location UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 8000 MHz - 8000 MHz 8000 MHz 8000 MHz
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