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P6KE6.8A-G

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
CategoryDiscrete semiconductor    diode   
File Size125KB,6 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
Download Datasheet Parametric View All

P6KE6.8A-G Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15

P6KE6.8A-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
Reach Compliance Codecompli
Breakdown voltage nominal value6.8 V
Maximum clamping voltage10.5 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage5.8 V
surface mountNO
Maximum time at peak reflow temperatureNOT SPECIFIED
600W Transient Voltage Suppressor
P6KE-G Series
Stand-off Voltage: 6.8 ~ 600V
Power Dissipation: 600 Watts
RoHS Device
Features
-Plastic package has underwriters laboratory
flammability classification 94V-0
-600W, surge capability at 1mS.
-Excellent clamping capability.
-Low Zener impedance.
-Fast response time: typically less than 1.0pS from
0 volt to BV min.
-Typical I
R
less than 1μA above 10V.
1.000(25.40)
MIN.
DO-15
0.033(0.84)
0.027(0.71)
0.300(7.63)
0.230(5.85)
Mechanical Data
-Epoxy: UL 94V-0 rate flame retardant
-Case: Molded plastic DO-15
-Terminals: Axial leads solderable per MIL-STD-202
, Method 208
-Polarity: Color band denotes positive end
(cathode)
-Weight: 0.4 grams
1.000(25.40)
MIN.
0.142(3.61)
0.102(2.60)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Peak power dissipation with a 10/1000
μ
s
waveform (Note 1)
Peak pulse current with a 10/1000
μs
waveform
(Note 1)
Power dissipation on infinite heatsink at T
L
=75 C
Peak forward surge current, 8.3mS single
half sine-wave unidirectional only
(JEDEC method) (Note 2)
Maximum instantantaneous forward voltage at
50 A for unidirectional only(Note 3)
Operating junction and storage temperature
range
O
Symbol
P
PP
Value
600
Unit
W
I
PP
P
D
See Next Table
5.0
A
W
I
FSM
100
A
V
F
3.5/5.0
V
T
J
, T
STG
-55 to +150
O
C
NTOES:
O
(1) Non-repetitive current pulse, per fig.5 and derated above T
A
=25 C per fig. 1
(2) Measured on 8.3ms single half sine-wave or equivalent square wave,equare wave,duty cycle=4 pulses per minute maximum
(3) V
F
<3.5V for devices of V
BR
<200V and V
F
<5.0V for devices of V
BR
>201V
REV:C
QW-BTV06
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