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K6F2008V2E

Description
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
File Size92KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K6F2008V2E Overview

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008V2E Family
Document Title
CMOS SRAM
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
1.0
1.1
Initial draft
Finalize
Draft Date
July 19 , 2001
September 27, 2001
Remark
Preliminary
Final
Final
Revised
May 13, 2003
- Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package.
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.1
May 2003

K6F2008V2E Related Products

K6F2008V2E K6F2008V2E-LF55 K6F2008V2E-LF70 K6F2008V2E-YF55 K6F2008V2E-YF70
Description 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Is it Rohs certified? - conform to conform to incompatible incompatible
Maker - SAMSUNG SAMSUNG SAMSUNG SAMSUNG
package instruction - TSOP1, TSSOP32,.56,20 TSOP1, TSSOP32,.56,20 TSOP1, TSSOP32,.56,20 TSOP1, TSSOP32,.56,20
Reach Compliance Code - unknow unknow compliant compli
Maximum access time - 55 ns 70 ns 55 ns 70 ns
I/O type - COMMON COMMON COMMON COMMON
JESD-30 code - R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
JESD-609 code - e1 e3/e6 e0 e0
length - 11.8 mm 11.8 mm 11.8 mm 11.8 mm
memory density - 2097152 bi 2097152 bi 2097152 bit 2097152 bi
Memory IC Type - STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width - 8 8 8 8
Number of functions - 1 1 1 1
Number of terminals - 32 32 32 32
word count - 262144 words 262144 words 262144 words 262144 words
character code - 256000 256000 256000 256000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C
organize - 256KX8 256KX8 256KX8 256KX8
Output characteristics - 3-STATE 3-STATE 3-STATE 3-STATE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - TSOP1 TSOP1 TSOP1 TSOP1
Encapsulate equivalent code - TSSOP32,.56,20 TSSOP32,.56,20 TSSOP32,.56,20 TSSOP32,.56,20
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial - PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) - 260 260 NOT SPECIFIED NOT SPECIFIED
power supply - 3.3 V 3.3 V 3.3 V 3.3 V
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height - 1.2 mm 1.2 mm 1.2 mm 1.2 mm
Maximum standby current - 0.000002 A 0.000002 A 0.000002 A 0.000002 A
Minimum standby current - 1.5 V 1.5 V 1.5 V 1.5 V
Maximum slew rate - 0.035 mA 0.035 mA 0.035 mA 0.035 mA
Maximum supply voltage (Vsup) - 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) - 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) - 3.3 V 3.3 V 3.3 V 3.3 V
surface mount - YES YES YES YES
technology - CMOS CMOS CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface - TIN SILVER COPPER PURE TIN/TIN BISMUTH Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form - GULL WING GULL WING GULL WING GULL WING
Terminal pitch - 0.5 mm 0.5 mm 0.5 mm 0.5 mm
Terminal location - DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature - 40 40 NOT SPECIFIED NOT SPECIFIED
width - 8 mm 8 mm 8 mm 8 mm
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