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K6F2008V2E-YF70

Description
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Categorystorage    storage   
File Size92KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

K6F2008V2E-YF70 Overview

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008V2E-YF70 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP32,.56,20
Contacts32
Reach Compliance Codecompli
ECCN code3A991.B.2.A
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length11.8 mm
memory density2097152 bi
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.56,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.000002 A
Minimum standby current1.5 V
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
K6F2008V2E Family
Document Title
CMOS SRAM
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
1.0
1.1
Initial draft
Finalize
Draft Date
July 19 , 2001
September 27, 2001
Remark
Preliminary
Final
Final
Revised
May 13, 2003
- Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package.
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.1
May 2003

K6F2008V2E-YF70 Related Products

K6F2008V2E-YF70 K6F2008V2E K6F2008V2E-LF55 K6F2008V2E-LF70 K6F2008V2E-YF55
Description 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Is it Rohs certified? incompatible - conform to conform to incompatible
Maker SAMSUNG - SAMSUNG SAMSUNG SAMSUNG
package instruction TSOP1, TSSOP32,.56,20 - TSOP1, TSSOP32,.56,20 TSOP1, TSSOP32,.56,20 TSOP1, TSSOP32,.56,20
Reach Compliance Code compli - unknow unknow compliant
Maximum access time 70 ns - 55 ns 70 ns 55 ns
I/O type COMMON - COMMON COMMON COMMON
JESD-30 code R-PDSO-G32 - R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
JESD-609 code e0 - e1 e3/e6 e0
length 11.8 mm - 11.8 mm 11.8 mm 11.8 mm
memory density 2097152 bi - 2097152 bi 2097152 bi 2097152 bit
Memory IC Type STANDARD SRAM - STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 - 8 8 8
Number of functions 1 - 1 1 1
Number of terminals 32 - 32 32 32
word count 262144 words - 262144 words 262144 words 262144 words
character code 256000 - 256000 256000 256000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C
organize 256KX8 - 256KX8 256KX8 256KX8
Output characteristics 3-STATE - 3-STATE 3-STATE 3-STATE
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP1 - TSOP1 TSOP1 TSOP1
Encapsulate equivalent code TSSOP32,.56,20 - TSSOP32,.56,20 TSSOP32,.56,20 TSSOP32,.56,20
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE - SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL - PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED - 260 260 NOT SPECIFIED
power supply 3.3 V - 3.3 V 3.3 V 3.3 V
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm 1.2 mm
Maximum standby current 0.000002 A - 0.000002 A 0.000002 A 0.000002 A
Minimum standby current 1.5 V - 1.5 V 1.5 V 1.5 V
Maximum slew rate 0.035 mA - 0.035 mA 0.035 mA 0.035 mA
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V - 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V - 3.3 V 3.3 V 3.3 V
surface mount YES - YES YES YES
technology CMOS - CMOS CMOS CMOS
Temperature level INDUSTRIAL - INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal surface Tin/Lead (Sn/Pb) - TIN SILVER COPPER PURE TIN/TIN BISMUTH Tin/Lead (Sn/Pb)
Terminal form GULL WING - GULL WING GULL WING GULL WING
Terminal pitch 0.5 mm - 0.5 mm 0.5 mm 0.5 mm
Terminal location DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - 40 40 NOT SPECIFIED
width 8 mm - 8 mm 8 mm 8 mm
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