K6F2008V2E-LF70 datasheet, PDF

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K6F2008V2E-LF70: Description256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM; Categorystorage storage; File Size92KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K6F2008V2E-LF70 Overview

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008V2E-LF70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	TSOP1, TSSOP32,.56,20
Reach Compliance Code	unknow
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e3/e6
length	11.8 mm
memory density	2097152 bi
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	2
Number of functions	1
Number of terminals	32
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000002 A
Minimum standby current	1.5 V
Maximum slew rate	0.035 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	PURE TIN/TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
width	8 mm

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K6F2008V2E Family

Document Title

CMOS SRAM

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

0.0

1.0

1.1

Initial draft

Finalize

Draft Date

July 19 , 2001

September 27, 2001

Remark

Preliminary

Final

Revised

May 13, 2003

- Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package.

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.1

May 2003

K6F2008V2E-LF70 Related Products

	K6F2008V2E-LF70	K6F2008V2E	K6F2008V2E-LF55	K6F2008V2E-YF55	K6F2008V2E-YF70
Description	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM	256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Is it Rohs certified?	conform to	-	conform to	incompatible	incompatible
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	TSOP1, TSSOP32,.56,20	-	TSOP1, TSSOP32,.56,20	TSOP1, TSSOP32,.56,20	TSOP1, TSSOP32,.56,20
Reach Compliance Code	unknow	-	unknow	compliant	compli
Maximum access time	70 ns	-	55 ns	55 ns	70 ns
I/O type	COMMON	-	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	-	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
JESD-609 code	e3/e6	-	e1	e0	e0
length	11.8 mm	-	11.8 mm	11.8 mm	11.8 mm
memory density	2097152 bi	-	2097152 bi	2097152 bit	2097152 bi
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	-	8	8	8
Number of functions	1	-	1	1	1
Number of terminals	32	-	32	32	32
word count	262144 words	-	262144 words	262144 words	262144 words
character code	256000	-	256000	256000	256000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-40 °C
organize	256KX8	-	256KX8	256KX8	256KX8
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	-	TSOP1	TSOP1	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20	-	TSSOP32,.56,20	TSSOP32,.56,20	TSSOP32,.56,20
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	-	260	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	-	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm
Maximum standby current	0.000002 A	-	0.000002 A	0.000002 A	0.000002 A
Minimum standby current	1.5 V	-	1.5 V	1.5 V	1.5 V
Maximum slew rate	0.035 mA	-	0.035 mA	0.035 mA	0.035 mA
Maximum supply voltage (Vsup)	3.6 V	-	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	-	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	-	3.3 V	3.3 V	3.3 V
surface mount	YES	-	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	PURE TIN/TIN BISMUTH	-	TIN SILVER COPPER	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	-	GULL WING	GULL WING	GULL WING
Terminal pitch	0.5 mm	-	0.5 mm	0.5 mm	0.5 mm
Terminal location	DUAL	-	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	-	40	NOT SPECIFIED	NOT SPECIFIED
width	8 mm	-	8 mm	8 mm	8 mm

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