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PBRN123EK

Description
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
CategoryDiscrete semiconductor    The transistor   
File Size142KB,17 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

PBRN123EK Overview

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ

PBRN123EK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)340
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.57 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
PBRN123E series
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 February 2007
Product data sheet
1. Product profile
1.1 General description
800 mA NPN low V
CEsat
Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistors (RET) family in small plastic packages.
Table 1.
Product overview
Package
NXP
PBRN123EK
PBRN123ES
[1]
PBRN123ET
[1]
Type number
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
SOT346
SOT54
SOT23
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
800 mA output current capability
I
High current gain h
FE
I
Built-in bias resistors
I
Simplifies circuit design
I
Low collector-emitter saturation voltage
V
CEsat
I
Reduces component count
I
Reduces pick and place costs
I
±10
% resistor ratio tolerance
1.3 Applications
I
Digital application in automotive and
industrial segments
I
Medium current peripheral driver
I
Switching loads
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
Quick reference data
Parameter
collector-emitter voltage
output current
PBRN123EK, PBRN123ET
PBRN123ES
Conditions
open base
[1]
Min
-
-
-
Typ
-
-
-
Max
40
600
800
Unit
V
mA
mA

PBRN123EK Related Products

PBRN123EK PBRN123E PBRN123ES PBRN123ET
Description NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Is it Rohs certified? conform to - conform to conform to
Maker NXP - NXP NXP
Parts packaging code SOT-23 - TO-92 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 - CYLINDRICAL, O-PBCY-T3 PLASTIC PACKAGE-3
Contacts 3 - 3 3
Reach Compliance Code unknow - unknow compli
ECCN code EAR99 - EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR RATIO 1 - BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC) 0.6 A - 0.8 A 0.6 A
Collector-emitter maximum voltage 40 V - 40 V 40 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 340 - 340 340
JEDEC-95 code TO-236AB - TO-92 TO-236AB
JESD-30 code R-PDSO-G3 - O-PBCY-T3 R-PDSO-G3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - ROUND RECTANGULAR
Package form SMALL OUTLINE - CYLINDRICAL SMALL OUTLINE
Polarity/channel type NPN - NPN NPN
Maximum power dissipation(Abs) 0.57 W - 0.7 W 0.57 W
Certification status Not Qualified - Not Qualified Not Qualified
surface mount YES - NO YES
Terminal form GULL WING - THROUGH-HOLE GULL WING
Terminal location DUAL - BOTTOM DUAL
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
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