Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,
| Parameter Name | Attribute value |
| Maker | General Instrument |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | UL RECOGNIZED |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V |
| JESD-30 code | R-PSIP-T4 |
| Maximum non-repetitive peak forward current | 60 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 165 °C |
| Minimum operating temperature | -55 °C |
| Maximum output current | 2 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse current | 5 µA |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| 3N258 | |
|---|---|
| Description | Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon, |
| Maker | General Instrument |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | UL RECOGNIZED |
| Configuration | BRIDGE, 4 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | BRIDGE RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.1 V |
| JESD-30 code | R-PSIP-T4 |
| Maximum non-repetitive peak forward current | 60 A |
| Number of components | 4 |
| Phase | 1 |
| Number of terminals | 4 |
| Maximum operating temperature | 165 °C |
| Minimum operating temperature | -55 °C |
| Maximum output current | 2 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse current | 5 µA |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |