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3N258

Description
Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size71KB,2 Pages
ManufacturerGeneral Instrument
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3N258 Overview

Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,

3N258 Parametric

Parameter NameAttribute value
MakerGeneral Instrument
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresUL RECOGNIZED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSIP-T4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

3N258 Related Products

3N258
Description Bridge Rectifier Diode, 1 Phase, 2A, 800V V(RRM), Silicon,
Maker General Instrument
Reach Compliance Code unknown
ECCN code EAR99
Other features UL RECOGNIZED
Configuration BRIDGE, 4 ELEMENTS
Diode component materials SILICON
Diode type BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V
JESD-30 code R-PSIP-T4
Maximum non-repetitive peak forward current 60 A
Number of components 4
Phase 1
Number of terminals 4
Maximum operating temperature 165 °C
Minimum operating temperature -55 °C
Maximum output current 2 A
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form IN-LINE
Certification status Not Qualified
Maximum repetitive peak reverse voltage 800 V
Maximum reverse current 5 µA
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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