SPB160N04S2L-03
OptiMOS
®
Power-Transistor
Feature
•
N-Channel
Product Summary
V
DS
R
DS(on)
max. SMD version
I
D
40
2.7
160
P- TO263 -7-3
V
mΩ
A
•
Enhancement mode
•
Logic Level
•
High Current Rating
•
Low On-Resistance
R
DS(on)
•
175°C operating temperature
•
Avalanche rated
•
dv/dt rated
Type
Package
SPB160N04S2L-03 P- TO263 -7-3
Ordering Code
Q67060-S6138
Marking
P2N04L03
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
1)
T
C
=25°C
T
C
=100°C
Value
160
160
Unit
A
I
D
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
E
AR
dv/dt
V
GS
P
tot
T
j ,
T
stg
640
810
30
6
±20
300
-55... +175
55/175/56
kV/µs
V
W
°C
mJ
Avalanche energy, single pulse
I
D
=80A,
V
DD
=25V,
R
GS
=25Ω
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode dv/dt
I
S
=160A,
V
DS
=32V,
di/dt=200A/µs,
T
jmax
=175°C
Gate source voltage
Power dissipation
T
C
=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Page 1
2003-05-22
SPB160N04S2L-03
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
-
max.
0.5
62
62
40
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
-
-
-
40
1.2
Values
typ.
-
1.6
max.
-
2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250µA
Zero gate voltage drain current
V
DS
=40V,
V
GS
=0V,
T
j
=25°C
V
DS
=40V,
V
GS
=0V,
T
j
=125°C
µA
0.01
1
1
2.7
2.1
1
100
100
3.7
2.7
nA
mΩ
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
V
GS
=4.5V,
I
D
=80A
Drain-source on-state resistance
V
GS
=10V,
I
D
=80A
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 243A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2003-05-22
SPB160N04S2L-03
Electrical Characteristics
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=32V,
I
D
=160A,
V
GS
=0 to 10V
V
DD
=32V,
I
D
=160A
Symbol
Conditions
min.
Values
typ.
230
6000
1900
460
12
80
93
72
max.
-
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=160A
V
GS
=0V,
V
DS
=25V,
f=1MHz
115
-
-
-
-
-
-
-
S
8000 pF
2530
690
18
120
140
110
ns
V
DD
=20V,
V
GS
=10V,
I
D
=160A,
R
G
=1.1Ω
-
-
-
-
21
60
170
3.7
28
90
230
-
nC
V
(plateau)
V
DD
=32V,
I
D
=160A
V
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
I
SM
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=80A
V
R
=20V,
I
F=
l
S
,
di
F
/dt=100A/µs
I
S
T
C
=25°C
-
-
-
-
-
-
-
0.9
62
145
160
640
1.3
78
180
A
V
ns
nC
Page 3
2003-05-22
SPB160N04S2L-03
5 Typ. output characteristic
I
D
=
f
(V
DS
);
T
j
=25°C
parameter:
t
p
= 80 µs
380
SPB160N04S2L-03
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
10
SPB160N04S2L-03
P
tot
= 300W
i
h
V
GS [V]
a
b
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.5
10.0
A
320
280
Ω
8
d
e
f
g
c
R
DS(on)
g
d
e
f
7
6
5
4
h
I
D
240
200
160
120
80
40
a
c
b
e
f
g
h
i
d
3
2
1
0
5
0
40
80
120
160
200
V
GS
[V] =
d
3.4
e
f
3.6 3.8
g
4.0
h
i
4.5 10.0
i
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
240
A
300
V
DS
I
D
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
≥
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
200
8 Typ. forward transconductance
g
fs
= f(I
D
);
T
j
=25°C
parameter:
g
fs
260
A
160
S
220
200
140
180
g
fs
V
V
GS
I
D
120
100
160
140
120
80
60
40
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
20
0
4
0
20
40
60
80 100 120 140 160
A
I
D
200
Page 5
2003-05-22
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