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P105CH02EN0

Description
Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size420KB,6 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

P105CH02EN0 Overview

Silicon Controlled Rectifier, 395000mA I(T), 200V V(DRM),

P105CH02EN0 Parametric

Parameter NameAttribute value
MakerIXYS
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Nominal circuit commutation break time10 µs
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current20 mA
On-state non-repetitive peak current2200 A
Maximum on-state voltage1.92 V
Maximum on-state current395000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage200 V
surface mountNO
Trigger device typeSCR

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