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PDTC114YM

Description
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
CategoryDiscrete semiconductor    The transistor   
File Size98KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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PDTC114YM Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PDTC114YM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSC-101
package instruction1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 4.7
Shell connectionCOLLECTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC114Y series
NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Product data sheet
Supersedes data of 2003 Sep 10
2004 Aug 17

PDTC114YM Related Products

PDTC114YM PDTC114Y PDTC114YE PDTC114YEF PDTC114YK PDTC114YS PDTC114YT PDTC114YU
Description 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
surface mount YES Yes YES YES YES NO YES YES
Terminal form NO LEAD GULL WING GULL WING FLAT GULL WING THROUGH-HOLE GULL WING GULL WING
Terminal location BOTTOM DUAL DUAL DUAL DUAL BOTTOM DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to - conform to conform to conform to conform to conform to conform to
Parts packaging code SC-101 - SC-75 SC-89 SOT-23 TO-92 SOT-23 SC-70
package instruction 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN - PLASTIC, SC-75, 3 PIN PLASTIC, SC-89, 3 PIN PLASTIC, SC-59A, 3 PIN CYLINDRICAL, O-PBCY-T3 PLASTIC PACKAGE-3 PLASTIC, SC-70, 3 PIN
Contacts 3 - 3 3 3 3 3 3
Reach Compliance Code compli - compli unknow unknow unknow compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTANCE RATIO IS 4.7 - BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7 BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 100 - 100 100 100 100 100 100
JESD-30 code R-PBCC-N3 - R-PDSO-G3 R-PDSO-F3 R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 - e3 e3 e3 e3 e3 e3
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR ROUND RECTANGULAR RECTANGULAR
Package form CHIP CARRIER - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260 NOT SPECIFIED 260 NOT SPECIFIED 260 260
Polarity/channel type NPN - NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.25 W - 0.15 W 0.25 W 0.25 W 0.5 W 0.25 W 0.2 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Terminal surface Tin (Sn) - Tin (Sn) Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature 30 - 30 NOT SPECIFIED 40 NOT SPECIFIED 30 30
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