PDTC114YT datasheet, PDF - EEWORLD Datasheet

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PDTC114YT: Description100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size98KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PDTC114YT Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PDTC114YT Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	3.5 pF
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power consumption environment	0.25 W
Maximum power dissipation(Abs)	0.25 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
VCEsat-Max	0.3 V

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DATA SHEET

PDTC114Y series

NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩ

Product data sheet

Supersedes data of 2003 Sep 10

2004 Aug 17

PDTC114YT Related Products

	PDTC114YT	PDTC114Y	PDTC114YE	PDTC114YEF	PDTC114YK	PDTC114YM	PDTC114YS	PDTC114YU
Description	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
surface mount	YES	Yes	YES	YES	YES	YES	NO	YES
Terminal form	GULL WING	GULL WING	GULL WING	FLAT	GULL WING	NO LEAD	THROUGH-HOLE	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	BOTTOM	BOTTOM	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	SOT-23	-	SC-75	SC-89	SOT-23	SC-101	TO-92	SC-70
package instruction	PLASTIC PACKAGE-3	-	PLASTIC, SC-75, 3 PIN	PLASTIC, SC-89, 3 PIN	PLASTIC, SC-59A, 3 PIN	1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN	CYLINDRICAL, O-PBCY-T3	PLASTIC, SC-70, 3 PIN
Contacts	3	-	3	3	3	3	3	3
Reach Compliance Code	compli	-	compli	unknow	unknow	compli	unknow	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTANCE RATIO IS 4.7	-	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	-	100	100	100	100	100	100
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-F3	R-PDSO-G3	R-PBCC-N3	O-PBCY-T3	R-PDSO-G3
JESD-609 code	e3	-	e3	e3	e3	e3	e3	e3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	CHIP CARRIER	CYLINDRICAL	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	-	260	NOT SPECIFIED	260	260	NOT SPECIFIED	260
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.25 W	-	0.15 W	0.25 W	0.25 W	0.25 W	0.5 W	0.2 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal surface	Tin (Sn)	-	Tin (Sn)	Tin (Sn)	Matte Tin (Sn)	Tin (Sn)	Matte Tin (Sn)	Tin (Sn)
Maximum time at peak reflow temperature	30	-	30	NOT SPECIFIED	40	30	NOT SPECIFIED	30

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