PDTC114YS datasheet, PDF - EEWORLD Datasheet

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PDTC114YS: Description100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB; CategoryDiscrete semiconductor The transistor; File Size98KB，14 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PDTC114YS Overview

100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

PDTC114YS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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DATA SHEET

PDTC114Y series

NPN resistor-equipped transistors;

R1 = 10 kΩ, R2 = 47 kΩ

Product data sheet

Supersedes data of 2003 Sep 10

2004 Aug 17

PDTC114YS Related Products

	PDTC114YS	PDTC114Y	PDTC114YE	PDTC114YEF	PDTC114YK	PDTC114YM	PDTC114YT	PDTC114YU
Description	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB	100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3
surface mount	NO	Yes	YES	YES	YES	YES	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	FLAT	GULL WING	NO LEAD	GULL WING	GULL WING
Terminal location	BOTTOM	DUAL	DUAL	DUAL	DUAL	BOTTOM	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-92	-	SC-75	SC-89	SOT-23	SC-101	SOT-23	SC-70
package instruction	CYLINDRICAL, O-PBCY-T3	-	PLASTIC, SC-75, 3 PIN	PLASTIC, SC-89, 3 PIN	PLASTIC, SC-59A, 3 PIN	1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN	PLASTIC PACKAGE-3	PLASTIC, SC-70, 3 PIN
Contacts	3	-	3	3	3	3	3	3
Reach Compliance Code	unknow	-	compli	unknow	unknow	compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	BUILT IN BIAS RESISTANCE RATIO IS 4.7	-	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7	BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	100	-	100	100	100	100	100	100
JESD-30 code	O-PBCY-T3	-	R-PDSO-G3	R-PDSO-F3	R-PDSO-G3	R-PBCC-N3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	-	e3	e3	e3	e3	e3	e3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CYLINDRICAL	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	CHIP CARRIER	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	260	NOT SPECIFIED	260	260	260	260
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	-	0.15 W	0.25 W	0.25 W	0.25 W	0.25 W	0.2 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal surface	Matte Tin (Sn)	-	Tin (Sn)	Tin (Sn)	Matte Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	30	NOT SPECIFIED	40	30	30	30

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