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PDTC123J

Description
NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM
File Size98KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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PDTC123J Overview

NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM

DISCRETE SEMICONDUCTORS
DATA SHEET
PDTC123J series
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
Product data sheet
Supersedes data of 2003 Apr 10
2004 Aug 13

PDTC123J Related Products

PDTC123J PDTC123JE PDTC123JEF PDTC123JK PDTC123JM PDTC123JS PDTC123JT PDTC123JU
Description NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM NPN resistor-equipped transistor NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM NPN resistor-equipped transistors; R1 = 2.2 kOHM, R2 = 47 kOHM
Is it Rohs certified? - conform to conform to conform to conform to conform to conform to conform to
Maker - NXP NXP NXP NXP NXP NXP NXP
Parts packaging code - SC-75 SC-89 SOT-23 SC-101 TO-92 SOT-23 SC-70
package instruction - PLASTIC, SC-75, 3 PIN PLASTIC, SC-89, 3 PIN PLASTIC, SC-59A, 3 PIN 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, PLASTIC, SC-101, 3 PIN CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts - 3 3 3 3 3 3 3
Reach Compliance Code - compliant unknown unknown compliant unknown compliant compliant
ECCN code - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Is Samacsys - N N N N N N N
Other features - BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT IN BIAS RESISTANCE RATIO IS 21 - BUILT IN BIAS RESISTANCE RATIO IS 21 BUILT IN BIAS RESISTANCE RATIO IS 21
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A 0.1 A - 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V 50 V 50 V - 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 100 100 100 100 - 100 100
JESD-30 code - R-PDSO-G3 R-PDSO-F3 R-PDSO-G3 R-PBCC-N3 - R-PDSO-G3 R-PDSO-G3
JESD-609 code - e3 e3 e3 e3 - e3 e3
Number of components - 1 1 1 1 - 1 1
Number of terminals - 3 3 3 3 - 3 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE CHIP CARRIER - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 NOT SPECIFIED 260 260 - 260 260
Polarity/channel type - NPN NPN NPN NPN - NPN NPN
Maximum power dissipation(Abs) - 0.15 W 0.25 W 0.25 W 0.25 W - 0.25 W 0.2 W
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount - YES YES YES YES - YES YES
Terminal surface - Tin (Sn) Tin (Sn) Matte Tin (Sn) Tin (Sn) - Tin (Sn) Tin (Sn)
Terminal form - GULL WING FLAT GULL WING NO LEAD - GULL WING GULL WING
Terminal location - DUAL DUAL DUAL BOTTOM - DUAL DUAL
Maximum time at peak reflow temperature - 30 NOT SPECIFIED 40 30 - 30 30
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON - SILICON SILICON
Base Number Matches - 1 1 1 1 1 1 1
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